ROSSETTO, ISABELLA

ROSSETTO, ISABELLA  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 33 (tempo di esecuzione: 0.041 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Enhanced Gate Reliability of p-GaN/AlGaN/GaN HEMTs Due to Gate Hole Injection and Recombination 2025 Fregolent, ManuelDe Santi, CarloBoito, MircoRossetto, IsabellaMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + IEEE ELECTRON DEVICE LETTERS - -
Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase 2025 Fraccaroli R.Fregolent M.Boito M.De Santi C.Canato E.Rossetto I.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation 2024 Fregolent, ManuelBoito, MircoDe Santi, CarloBuffolo, MatteoRossetto, IsabellaMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY - -
Review on the degradation of GaN-based lateral power transistors 2021 De Santi, C.Buffolo, M.Rossetto, I.Caria, A.Chiocchetta, F.Favero, D.Fregolent, M.Masin, F.Modolo, N.Nardo, A.Piva, F.Rampazzo, F.Trivellin, N.Gao, Z.Meneghini, M.Zanoni, E.Meneghesso, G. + E-PRIME, ADVANCES IN ELECTRICAL ENGINEERING, ELECTRONICS AND ENERGY - -
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal 2018 Rossetto, I.Meneghini, M.De Santi, C.Meneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs 2017 Rossetto, I.Meneghini, M.Tajalli, A.Dalcanale, S.De Santi, C.Zanoni, E.Meneghesso, G. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs 2017 Borga, MatteoMeneghini, MatteoRossetto, IsabellaStoffels, SteveMeneghesso, GaudenzioZanoni, Enrico + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs 2017 Tajalli, AlalehMeneghini, MatteoRossetto, IsabellaZanoni, EnricoMeneghesso, Gaudenzio + MICROELECTRONICS RELIABILITY - -
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level 2017 Rossetto, I.Meneghini, M.Canato, E.Barbato, M.Stoffels, S.Meneghesso, G.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Field-related failure of GaN-on-Si HEMTs: Dependence on device geometry and passivation 2017 ROSSETTO, ISABELLAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Secondary electroluminescence of GaN-on-Si RF HEMTs: Demonstration and physical origin 2017 MENEGHINI, MATTEOBARBATO, ALESSANDROROSSETTO, ISABELLAFAVARON, ANDREAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes under HTRB Tests 2017 ROSSETTO, ISABELLAMENEGHINI, MATTEO + IEEE ELECTRON DEVICE LETTERS - -
Evidence of Hot-Electron Degradation in GaN-based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress 2016 RUZZARIN, MARIAMENEGHINI, MATTEOROSSETTO, ISABELLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Gate stability of GaN-Based HEMTs with P-Type Gate 2016 MENEGHINI, MATTEOROSSETTO, ISABELLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + ELECTRONICS - -
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs 2016 MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDERUZZARIN, MARIAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure 2016 MENEGHINI, MATTEOSILVESTRI, RICCARDOROSSETTO, ISABELLAZANONI, ENRICOMENEGHESSO, GAUDENZIODALCANALE, STEFANO + MICROELECTRONICS RELIABILITY - -
Reliability and parasitic issues in GaN-based power HEMTs: A review 2016 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDEZANONI, ENRICO + SEMICONDUCTOR SCIENCE AND TECHNOLOGY - -
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis 2016 ROSSETTO, ISABELLAMENEGHINI, MATTEORUZZARIN, MARIAFAVARON, ANDREAMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate 2016 ROSSETTO, ISABELLAMENEGHINI, MATTEODE SANTI, CARLODALCANALE, STEFANOZANONI, ENRICOMENEGHESSO, GAUDENZIO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate 2016 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOBISI, DAVIDEROSSETTO, ISABELLAZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -