ZANONI, ENRICO
ZANONI, ENRICO
Dipartimento di Ingegneria dell'Informazione - DEI
"Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs" in III-Nitride Based Light Emitting Diodes and Applications
2013 Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico
"Hot-plugging" of LED modules: Electrical characterization and device degradation
2013 DAL LAGO, Matteo; Meneghini, Matteo; Trivellin, Nicola; G., Mura; M., Vanzi; Meneghesso, Gaudenzio; Zanoni, Enrico
"Reliability of PtSi-Ti/W-Al Metallization System used in Bipolar Logics"19th International Reliability Physics Symposium
1981 Claudio, Canali; Fausto, Fantini; Giuseppe, Queirolo; Zanoni, Enrico
'Hole Redistribution' Model Explaining the Thermally Activated RONStress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs
2021 Zagni, N.; Chini, A.; Puglisi, F. M.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Pavan, P.; Verzellesi, G.
2.1 A/mm current density AlGaN/GaN HEMT
2003 Chini, Alessandro; Coffie, R.; Meneghesso, Gaudenzio; Zanoni, Enrico; Buttari, Dario; Heikman, S.; Keller, S.; Mishra, U. K.
24 Hours Stress Test and Failure Analysis of 0.25 μm AlGaN/GaN HEMTs
2018 Rzin, M.; Rampazzo, F.; Meneghini, M.; Grünenpütt, J.; Jung, H.; Lambert, B.; Riepe, K.; Blanck, H.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Poppitz, D.; Meneghesso, G.; Zanoni, E.
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal
2018 Rossetto, I.; Meneghini, M.; De Santi, C.; Pandey, Sudip; Gajda, M.; Hurkx, G. A. M.; Croon, J.; Šonský, J.; Meneghesso, G.; Zanoni, E.
A CMOS 0.8um Programmable Charge Pump for the Output Stage of an Impantable Pacemaker
2000 Novo, A; Gerosa, Andrea; Neviani, Andrea; Mozzi, A; Zanoni, Enrico
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes
2009 Meneghini, Matteo; Trivellin, Nicola; Meneghesso, Gaudenzio; Zanoni, Enrico; U., Zehnder; B., Hahn
A combined Monte Carlo and experimental analysis of light emission phenomena in AlGaAs/GaAs HBTs
1998 DI CARLO, A; Lugli, P; Canali, C; Malik, R; Manfredi, M; Neviani, Andrea; Zanoni, Enrico; Zandler, G.
A combined µ-Cathodoluminescence and µ-Photoluminescence Investigation of the Degradation of InGaN/GaN Laser Diodes
2013 Meneghini, Matteo; Carraro, Simone; Vaccari, Simone; Trivellin, Nicola; Meneghesso, Gaudenzio; G., Mura; F., Rossi; G., Salviati; J., Holc; T., Weig; L., Schade; M. A., Karunakara; U. T., Schwarz; Zanoni, Enrico
A compact method for measuring parasitic resistances in bipolar transistors
1993 G., Verzellesi; A., Chantre; R., Turetta; M., Cappellin; P., Pavan; Zanoni, Enrico
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications
2016 DE SANTI, Carlo; Dalcanale, Stefano; Stocco, Antonio; Rampazzo, Fabiana; Gerardin, Simone; Meneghini, Matteo; Meneghesso, Gaudenzio; Chini, Alessandro; Verzellesi, Giovanni; Grünenpütt, Jan; Lambert, Benoit; Schauwecker, Bernd; Blanck, Hervé; Barnes, Andrew; Zanoni, Enrico
A fully electronic sensor for the measurement of cDNA hybridization kinetics
2007 Bandiera, L; Cellere, G; Cagnin, Stefano; DE TONI, A; Zanoni, Enrico; Lanfranchi, Gerolamo; Lorenzelli, L.
A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level
2021 Modolo, N.; Minetto, A.; De Santi, C.; Sayadi, L.; Sicre, S.; Prechtl, G.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
A led lighting device with an adjustable spatial distribution of the emitted light
2011 Stefano, Bonora; Meneghini, Matteo; Zanoni, Enrico; Brusatin, Giovanna; Falco, Ivan; Bassi, Mattia; Marrani, Alessio
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes
2008 Meneghini, Matteo; Rigutti, L; Trevisanello, LORENZO ROBERTO; Cavallini, A; Meneghesso, Gaudenzio; Zanoni, Enrico
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs
2009 Pavesi, M; Rossi, F; Manfredi, M; Salviati, G; Meneghini, Matteo; Zanoni, Enrico
A new degradation mechanism induced by DX-center in AlGaAs/InGaAs PM-HEMT's
1994 Zanoni, Enrico; E., De Bortoli; Meneghesso, Gaudenzio; Neviani, Andrea; L., Vendrame; A. Paccagnella C., Canali
A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistorsInternational Technical Digest on Electron Devices Meeting
1992 Verzellesi, Vendrame; Turetta, Pavan; Chantre, Marty; Cavone, Rivoir; Zanoni, Enrico