NARDO, ARIANNA
NARDO, ARIANNA
Università di Padova
Impact of drain-source leakage on the dynamic Ron of power HEMTs with p-GaN gate
2025 Longato, S. L.; Favero, D.; Stockman, A.; Nardo, A.; Vanmeerbeek, P.; Tack, M.; Meneghesso, G.; Zanoni, E.; De Santi, C.; Meneghini, M.
Dynamic phenomena in 650V p-GaN technology
2024 Stockman, A.; Nardo, A.; Vanmeerbeek, P.; Tack, M.; Favero, D.; Longato, S.; De Santi, C.; Meneghini, M.
Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate
2024 Favero, D.; De Santi, C.; Nardo, A.; Dixit, A.; Vanmeerbeek, P.; Stockman, A.; Tack, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
RON and VTH Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout
2024 Favero, D.; De Santi, C.; Stockman, A.; Nardo, A.; Vanmeerbeek, P.; Tack, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Vth stability and gate leakage current trade-off in p-GaN gate power HEMTs during on- and off-state stress
2024 Favero, Davide; DE SANTI, Carlo; Stockman, Arno; Nardo, Arianna; Vanmeerbeek, Piet; Tack, Marnix; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Analysis of parasitic effects and reliability issues of Gallium Nitride (GaN) -based devices
2023 Nardo, Arianna
Dynamic performance of wide bandgap devices
2022 De Santi, C.; Fregolent, M.; Modolo, N.; Nardo, A.; Buffolo, M.; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis
2022 Nardo, Arianna; de Santi, Carlo; Carraro, C.; Sgarbossa, Francesco; Buffolo, M.; Diehle, P.; Gierth, S.; Altmann, Frank; Hahn, H.; Fahle, D.; Heuken, Michael; Fouchier, M.; Gasparotto, A.; Napolitani, Enrico; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Time-dependent degradation of hydrogen-terminated diamond MESFETs
2022 De Santi, C; Pavanello, L; Nardo, A; Veron, C; Rinati, Gv; Cannata, D; Di Pietrantonio, F; Meneghesso, G; Zanoni, E; Meneghini, M
Charge trapping in GaN Power Transistors: Challenges and Perspectives
2021 Meneghini, M; Modolo, N; Nardo, A; De Santi, C; Minetto, A; Sayadi, L; Koller, C; Sicre, S; Prechtl, G; Meneghesso, G; Zanoni, E
Hydrogen-terminated diamond MESFETs: Operating principles, static and dynamic performance, and reliability
2021 De Santi, C.; Pavanello, L.; Nardo, A.; Buffolo, M.; Verona, C.; Verona Rinati, G.; Cannata, D.; Di Pietrantonio, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes
2021 Nardo, A.; De Santi, C.; Koller, C.; Ostermaier, C.; Daumiller, I.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Review on the degradation of GaN-based lateral power transistors
2021 De Santi, C.; Buffolo, M.; Rossetto, I.; Bordignon, T.; Brusaterra, E.; Caria, A.; Chiocchetta, F.; Favero, D.; Fregolent, M.; Masin, F.; Modolo, N.; Nardo, A.; Piva, F.; Rampazzo, F.; Sharma, C.; Trivellin, N.; Gao, Z.; Meneghini, M.; Zanoni, E.; Meneghesso, G.
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects
2020 Modolo, N.; Meneghini, M.; Barbato, A.; Nardo, A.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Sicre, S.; Prechtl, G.; Curatola, G.
Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs
2020 De Santi, C.; Pavanello, L.; Nardo, A.; Verona, C.; Rinati, G. V.; Cannata, D.; Pietrantonio, F. D.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Charge trapping and degradation of Ga2O3 isolation structures for power electronics
2020 De Santi, C.; Nardo, A.; Wong, M. H.; Goto, K.; Kuramata, A.; Yamakoshi, S.; Murakami, H.; Kumagai, Y.; Higashiwaki, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Degradation effects and origin in H-terminated diamond MESFETs
2020 De Santi, C.; Pavanello, L.; Nardo, A.; Verona, C.; Verona Rinati, G.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Hot-Electron Effects in AlGaN/GaN HEMTs under Semi-ON DC Stress
2020 Minetto, A.; Deutschmann, B.; Modolo, N.; Nardo, A.; Meneghini, M.; Zanoni, E.; Sayadi, L.; Prechtl, G.; Sicre, S.; Haberlen, O.
Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy
2020 Nardo, A.; Meneghini, M.; Barbato, A.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Sicre, S.; Sayadi, L.; Prechtl, G.; Curatola, G.
Reliability of H-terminated diamond MESFETs in high power dissipation operating condition
2020 De Santi, C.; Pavanello, L.; Nardo, A.; Verona, C.; Verona Rinati, G.; Meneghesso, G.; Zanoni, E.; Meneghini, M.