BISI, DAVIDE

BISI, DAVIDE  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 61 (tempo di esecuzione: 0.052 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation 2015 MARINO, FABIO ALESSIOBISI, DAVIDEMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + SOLID-STATE ELECTRONICS - -
Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics 2015 BISI, DAVIDEMENEGHINI, MATTEO + SOLID-STATE ELECTRONICS - -
Breakdown investigation in GaN-based MIS-HEMT devices 2014 MARINO, FABIO ALESSIOBISI, DAVIDEMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE - 2014 44th European Solid State Device Research Conference (ESSDERC)
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements 2014 MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDESTOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Characterization of Charge Trapping Phenomena in GaN-based HEMTs 2015 Bisi, Davide - - -
Characterization of High-Voltage Charge-Trapping Effects in GaN-based Power HEMTs 2014 BISI, DAVIDESTOCCO, ANTONIOMENEGHINI, MATTEORAMPAZZO, FABIANACESTER, ANDREAMENEGHESSO, GAUDENZIOZANONI, ENRICO - - Solid State Device Research Conference (ESSDERC), 2014 44th European
Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis 2012 BISI, DAVIDESTOCCO, ANTONIORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 21th European workshop on Heterostructure Technology, HeTech 2012
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 2011 ZANANDREA, ALBERTORAMPAZZO, FABIANASTOCCO, ANTONIOZANONI, ENRICOBISI, DAVIDEMENEGHESSO, GAUDENZIO + - - 20th European Heterostructure Technology meeting (HeTech 2011)
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects 2024 Saro, Marcode Pieri, FrancescoCarlotto, AndreaFornasier, MirkoRampazzo, FabianaDe Santi, CarloMeneghesso, GaudenzioMeneghini, MatteoZanoni, EnricoBisi, Davide + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2024 PROCEEDINGS
Deep Levels Characterization by Means of Drain Current Transient in AlGaN/GaN HEMT Devices 2013 BISI, DAVIDESTOCCO, ANTONIORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2013)
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 2013 BISI, DAVIDEMENEGHINI, MATTEODE SANTI, CARLOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Deep-Levels characterization in AlGaN/GaN High Electron Mobility Transistors by means of Drain Current Transient Analysis 2013 BISI, DAVIDESTOCCO, ANTONIORAMPAZZO, FABIANAMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - 10th Topical Workshop on Heterostructure Microelectronics
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIOBISI, DAVIDEDE SANTI, CARLOROSSETTO, ISABELLAZANANDREA, ALBERTORAMPAZZO, FABIANAZANONI, ENRICO MICROELECTRONIC ENGINEERING - -
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIOBISI, DAVIDEDE SANTI, CARLOROSSETTO, ISABELLAZANANDREA, ALBERTOCESTER, ANDREARAMPAZZO, FABIANAZANONI, ENRICO - - 18th Conference of "Insulating Films on Semiconductors" (INFOS2013)
Dielectric related issues in GaN based MIS HEMTs 2017 G. MeneghessoD. BisiI RossettoM. RuzzarinC. De SantiMENEGHINI, MATTEOE. Zanoni - - Proceedings of the 44th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-44)
Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs 2016 BISI, DAVIDEMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES - -
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 2015 Bisi, DStocco, A.Rossetto, I.Meneghini, M.Rampazzo, Fabiana.Chini, A.De Salvador, D.Bazzan, M.Meneghesso, G.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Effects of Thermal Annealing on Current Degradation in Enhancement Mode Pd gate InAlAs/InGaAs/InP pHEMTs 2011 BISI, DAVIDECHINI, ALESSANDRO + - - 20th European Heterostructure Technology meeting
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors 2015 MENEGHINI, MATTEOSILVESTRI, RICCARDODALCANALE, STEFANOBISI, DAVIDEZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - IEEE International Reliability Physics Symposium Proceedings
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 2012 BISI, DAVIDESTOCCO, ANTONIOMENEGHINI, MATTEOGASPAROTTO, ANDREAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - IEEE IRPS2012, International Reliability Physics Symposium