BISI, DAVIDE

BISI, DAVIDE  

Dipartimento di Ingegneria dell'Informazione - DEI  

Mostra records
Risultati 1 - 20 di 61 (tempo di esecuzione: 0.05 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects 2024 Saro, Marcode Pieri, FrancescoCarlotto, AndreaFornasier, MirkoRampazzo, FabianaDe Santi, CarloMeneghesso, GaudenzioMeneghini, MatteoZanoni, EnricoBisi, Davide + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2024 PROCEEDINGS
Observation of hot electron and impact ionization in N-Polar GaN MIS-HEMTs 2018 Bisi, DavideDe Santi, CarloMeneghini, MatteoMeneghesso, GaudenzioZanoni, Enrico + IEEE ELECTRON DEVICE LETTERS - -
Dielectric related issues in GaN based MIS HEMTs 2017 G. MeneghessoD. BisiI RossettoM. RuzzarinC. De SantiMENEGHINI, MATTEOE. Zanoni - - Proceedings of the 44th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-44)
Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3dielectrics grown on GaN 2017 Bisi, DavideMeneghini, Matteo + JOURNAL OF APPLIED PHYSICS - -
Instability of Dynamic- RONand Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors 2017 Ruzzarin, M.Meneghini, M.Bisi, D.Meneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Positive and negative Vth instabilities in Vertical GaN-on-GaN FinFET 2017 Maria RuzzarinMatteo MeneghiniDavide BisiCarlo De SantiGaudenzio MeneghessoEnrico Zanoni + - - Proceedings of the 12th International Conference on Nitride Semiconductors (ICNS-12)
Reliability physics of GaN HEMTs for power switching applications: role of the gate structure 2017 Enrico ZanoniAlessandro BarbatoDavide BisiCarlo De SantiFabiana RampazzoIsabella RossettoMaria RuzzarinNicola TrivellinGaudenzio MeneghessoMatteo Meneghini + - - Proceedings of the 12th International Conference on Nitride Semiconductors (ICNS-12)
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices 2017 Enrico ZanoniAlessandro BarbatoDavide BisiCarlo De SantiIsabella RossettoMaria RuzzarinNicola TrivellinAlessandro ChiniGaudenzio MeneghessoMatteo Meneghini - - Proceedings of the 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2017)
Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs 2016 BISI, DAVIDEMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES - -
Field-dependent degradation mechanisms in GaN-based HEMTs 2016 MENEGHINI, MATTEOMENEGHESSO, GAUDENZIOROSSETTO, ISABELLARAMPAZZO, FABIANADE SANTI, CARLOBISI, DAVIDEZANONI, ENRICO + - - Proc. of the 23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs 2016 MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDERUZZARIN, MARIAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
On trapping mechanisms at oxide-traps in Al<inf>2</inf>O<inf>3</inf>/GaN metal-oxide-semiconductor capacitors 2016 BISI, DAVIDEMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + APPLIED PHYSICS LETTERS - -
Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities 2016 I. RossettoD. BisiC. De SantiA. StoccoG. MeneghessoE. ZanoniM. Meneghini - - Power GaN Devices: Materials, Applications and Reliability
Quality and reliability of in-situ Al<inf>2</inf>O<inf>3</inf> MOS capacitors for GaN-based power devices 2016 BISI, DAVIDEMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Proceedings of the 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Reliability and parasitic issues in GaN-based power HEMTs: A review 2016 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDEZANONI, ENRICO + SEMICONDUCTOR SCIENCE AND TECHNOLOGY - -
Reliability of Power Devices: Bias-Induced Threshold Voltage Instability and Dielectric Breakdown in GaN MIS-HEMTs 2016 MENEGHESSO, GAUDENZIOBISI, DAVIDEROSSETTO, ISABELLARUZZARIN, MARIAMENEGHINI, MATTEOZANONI, ENRICO - - IEEE International Integrated Reliability Workshop (IEEE IIRW), October 8-12, 2017, Stanford Sierra Conference Center, Fallen Leaf Lake, CA, USA
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate 2016 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOBISI, DAVIDEROSSETTO, ISABELLAZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation 2015 MARINO, FABIO ALESSIOBISI, DAVIDEMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + SOLID-STATE ELECTRONICS - -
Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics 2015 BISI, DAVIDEMENEGHINI, MATTEO + SOLID-STATE ELECTRONICS - -
Characterization of Charge Trapping Phenomena in GaN-based HEMTs 2015 Bisi, Davide - - -