MENEGHINI, MATTEO
MENEGHINI, MATTEO
Dipartimento di Ingegneria dell'Informazione - DEI
"Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs" in III-Nitride Based Light Emitting Diodes and Applications
2013 Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico
"Hot-plugging" of LED modules: Electrical characterization and device degradation
2013 DAL LAGO, Matteo; Meneghini, Matteo; Trivellin, Nicola; G., Mura; M., Vanzi; Meneghesso, Gaudenzio; Zanoni, Enrico
'Hole Redistribution' Model Explaining the Thermally Activated RONStress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs
2021 Zagni, N.; Chini, A.; Puglisi, F. M.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Pavan, P.; Verzellesi, G.
24 Hours Stress Test and Failure Analysis of 0.25 μm AlGaN/GaN HEMTs
2018 Rzin, M.; Rampazzo, F.; Meneghini, M.; Grünenpütt, J.; Jung, H.; Lambert, B.; Riepe, K.; Blanck, H.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Poppitz, D.; Meneghesso, G.; Zanoni, E.
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal
2018 Rossetto, I.; Meneghini, M.; De Santi, C.; Pandey, Sudip; Gajda, M.; Hurkx, G. A. M.; Croon, J.; Šonský, J.; Meneghesso, G.; Zanoni, E.
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes
2009 Meneghini, Matteo; Trivellin, Nicola; Meneghesso, Gaudenzio; Zanoni, Enrico; U., Zehnder; B., Hahn
A combined µ-Cathodoluminescence and µ-Photoluminescence Investigation of the Degradation of InGaN/GaN Laser Diodes
2013 Meneghini, Matteo; Carraro, Simone; Vaccari, Simone; Trivellin, Nicola; Meneghesso, Gaudenzio; G., Mura; F., Rossi; G., Salviati; J., Holc; T., Weig; L., Schade; M. A., Karunakara; U. T., Schwarz; Zanoni, Enrico
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications
2016 DE SANTI, Carlo; Dalcanale, Stefano; Stocco, Antonio; Rampazzo, Fabiana; Gerardin, Simone; Meneghini, Matteo; Meneghesso, Gaudenzio; Chini, Alessandro; Verzellesi, Giovanni; Grünenpütt, Jan; Lambert, Benoit; Schauwecker, Bernd; Blanck, Hervé; Barnes, Andrew; Zanoni, Enrico
A Distributed Electrical Network to Model the Local Shunting in Multicrystalline Silicon Solar Cells
2012 D., Giaffreda; Magnone, Paolo; R., De Rose; Barbato, Marco; Meneghini, Matteo; Giliberto, Valentina; Meneghesso, Gaudenzio; E., Sangiorgi; C., Fiegna
A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level
2021 Modolo, N.; Minetto, A.; De Santi, C.; Sayadi, L.; Sicre, S.; Prechtl, G.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
A led lighting device with an adjustable spatial distribution of the emitted light
2011 Stefano, Bonora; Meneghini, Matteo; Zanoni, Enrico; Brusatin, Giovanna; Falco, Ivan; Bassi, Mattia; Marrani, Alessio
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes
2008 Meneghini, Matteo; Rigutti, L; Trevisanello, LORENZO ROBERTO; Cavallini, A; Meneghesso, Gaudenzio; Zanoni, Enrico
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs
2009 Pavesi, M; Rossi, F; Manfredi, M; Salviati, G; Meneghini, Matteo; Zanoni, Enrico
A new method for CdSexTe1-x band grading for high efficiency thin-absorber CdTe solar cells
2021 Artegiani, E.; Gasparotto, A.; Punathil, P.; Kumar, V.; Barbato, M.; Meneghini, M.; Meneghesso, G.; Piccinelli, F.; Romeo, A.
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps
2012 Meneghini, Matteo; Bertin, Marco; G., dal Santo; Stocco, Antonio; A., Chini; D., Marcon; P. E., Malinowski; G., Mura; E., Musu; M., Vanzi; Meneghesso, Gaudenzio; Zanoni, Enrico
A novel high voltage and high speed measurement system for dynamic RON measurements in GaN‐based high mobility transistors (HEMTs)
2016 Barbato, Alessandro; Rossetto, Isabella; Barbato, Marco; Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio
A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation
2023 Cavaliere, A.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects
2020 Modolo, N.; Meneghini, M.; Barbato, A.; Nardo, A.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Sicre, S.; Prechtl, G.; Curatola, G.
A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs
2020 Modolo, Nicola; Tang, Shun-Wei; Jiang, Hong-Jia; De Santi, Carlo; Meneghini, Matteo; Wu, Tian-Li
A Novel System to Measure the Dynamic On‑Resistance of On‑Wafer 600 V Normally-Off GaN HEMTs in Real Application Conditions
2017 Barbato, Alessandro; Barbato, M.; Meneghini, M.; Silvestri, M.; Detzel, T.; Haeberlen, O.; Meneghesso, G.; Zanoni, E.