TAJALLI, ALALEH

TAJALLI, ALALEH  

Dipartimento di Ingegneria dell'Informazione - DEI  

Mostra records
Risultati 1 - 20 di 28 (tempo di esecuzione: 0.047 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
High breakdown voltage and low buffer trapping in superlattice gan-on-silicon heterostructures for high voltage applications 2020 Tajalli A.Meneghini M.Zanoni E.Medjdoub F.Meneghesso G. + MATERIALS - -
Vertical breakdown of GaN on Si due to V-pits 2020 Tajalli A.Meneghini M.Medjdoub F.Meneghesso G. + JOURNAL OF APPLIED PHYSICS - -
Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment 2020 Tajalli A.Borga M.Meneghini M.Santi C. D.Zanoni E.Medjdoub F.Meneghesso G. + MICROMACHINES - -
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 2019 Matteo MeneghiniCarlo De SantiAlessandro BarbatoMatteo BorgaEleonora CanatoFrancesca ChiocchettaElena FabrisZhan GaoFabrizio MasinKalparupa MukherjeeArianna NardoFabiana RampazzoMaria RuzzarinMehdi RzinAlaleh TajalliMarco BarbatoGaudenzio MeneghessoEnrico Zanoni - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Degradation physics of GaN-based lateral and vertical devices 2019 Meneghini M.De Santi C.Barbato A.Borga M.Canato E.CHIOCCHETTA, FRANCESCAFabris E.Masin F.Nardo A.Rampazzo F.Ruzzarin M.Tajalli A.Barbato M.Meneghesso G.Zanoni E. - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Low On-Resistance and Low Trapping Effects in 1200 V Superlattice GaN-on-Silicon Heterostructures 2019 Tajalli A.Meneghini M.Meneghesso G.Medjdoub F. + PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE - -
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 2019 C. De SantiM. MeneghiniA. BarbatoM. BorgaE. CanatoF. ChiocchettaE. FabrisZ. GaoF. MasinK. MukherjeeA. NardoM. RuzzarinM. RzinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of MATERIALS RESEARCH MEETING 2019 (MRM2019)
Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V 2019 A TajalliM MeneghiniG Meneghesso + - - Proceedings of the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2019)
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors 2019 Tajalli, A.Meneghini, M.Gerardin, S.Bagatin, M.Paccagnella, A.Meneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Challenges towards highly reliable GaN power transistors 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the GaN Marathon 2.0
Characterization and Study of Reliability Aspects in GaN High ElectronMobility Transistors 2018 Tajalli, Alaleh - - -
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors 2018 TAJALLI, ALALEHMeneghini, M.Gerardin, S.Bagatin, M.Paccagnella, A.Zanoni, E.Meneghesso, G. + PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Gallium Nitride power devices: challenges and perspectives 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoM. RuzzarinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2018)
High voltage GaN on si with low trapping up to 1200V 2018 A. TajalliM. MeneghiniG. MeneghessoE. Zanoni + - - Proceedings of the 2018 International Workshop on Nitride Semiconductors (IWN 2018)
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors 2018 Tajalli, A.Canato, E.NARDO, ARIANNAMeneghini, M.Zanoni, E.Meneghesso, G. + MICROELECTRONICS RELIABILITY - -
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 2018 CANATO, ELEONORATajalli, A.Meneghini, M.Meneghesso, G.Zanoni, E. + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Recent Advancements in Power GaN Reliability 2018 C. De SantiM. MeneghiniM. BorgaM. RuzzarinE. CanatoA. TajalliA. BarbatoE. FabrisE. ZanoniG. Meneghesso - - Proceedings of the 2018 Materials Research Society Spring Meeting
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 2018 G. MeneghessoM. MeneghiniC. De SantiA. BarbatoM. BarbatoM. BorgaE. CanatoE. FabrisF. MasinM. RuzzarinA. TajalliE. Zanoni - - Proceedings of the 2018 International Workshop on Nitride Semiconductors (IWN 2018)
Towards low-trapping GaN-on-silicon material system for 1200 V applications 2018 A. TajalliM. MeneghiniG. MeneghessoE. Zanoni + - - Proceedings of the European Materials Research Society Fall Meeting 2018
Trapping phenomena and degradation mechanisms in GaN-based power HEMTs 2018 Meneghini, MatteoTajalli, AlalehZanoni, EnricoMeneghesso, Gaudenzio + MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING - -