ROSSETTO, ISABELLA
ROSSETTO, ISABELLA
Dipartimento di Ingegneria dell'Informazione - DEI
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal
2018 Rossetto, I.; Meneghini, M.; De Santi, C.; Pandey, Sudip; Gajda, M.; Hurkx, G. A. M.; Croon, J.; Šonský, J.; Meneghesso, G.; Zanoni, E.
Reliability of GaN-Based Power Devices
2018 Meneghesso, G.; Zanoni, E.; Meneghini, M.; Ruzzarin, M.; Rossetto, I.
Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs
2017 Borga, M.; Meneghini, M.; Rossetto, I.; Silvestri, M.; Haeberlen, O.; Detzel, T.; Meneghesso, G.; Zanoni, E.
Coupled experimental/simulation analysis as a tool for probing trap-related and high-electric-field phenomena in GaN HEMTs
2017 Verzellesi, G.; Chini, A.; De Santi, C.; Meneghesso, G.; Meneghini, M.; Rossetto, I.; Zanoni, E.
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry
2017 Meneghini, Matteo; Rossetto, Isabella; Borga, Matteo; Canato, Eleonora; De Santi, Carlo; Rampazzo, Fabiana; Meneghesso, Gaudenzio; Zanoni, Enrico; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Decoutere, Stefaan
Dielectric related issues in GaN based MIS HEMTs
2017 Meneghesso, G.; Bisi, D.; Rossetto, I; Ruzzarin, M.; De Santi, C.; Meneghini, Matteo; Zanoni, E.
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs
2017 Rossetto, I.; Meneghini, M.; Tajalli, A.; Dalcanale, S.; De Santi, C.; Moens, P.; Banerjee, A.; Zanoni, E.; Meneghesso, G.
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs
2017 Borga, Matteo; Meneghini, Matteo; Rossetto, Isabella; Stoffels, Steve; Posthuma, Niels; Van Hove, Marleen; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs
2017 Tajalli, Alaleh; Meneghini, Matteo; Rossetto, Isabella; Moens, Peter; Banerjee, Abhishek; Zanoni, Enrico; Meneghesso, Gaudenzio
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level
2017 Rossetto, I.; Meneghini, M.; Canato, E.; Barbato, M.; Stoffels, S.; Posthuma, N.; Decoutere, S.; Tallarico, A. N.; Meneghesso, G.; Zanoni, E.
Field-related failure of GaN-on-Si HEMTs: Dependence on device geometry and passivation
2017 Rossetto, Isabella; Meneghini, Matteo; Pandey, S.; Gajda, M.; Hurkx, G. A. M.; Croon, J. A.; Sonsky, J.; Meneghesso, Gaudenzio; Zanoni, Enrico
Gaining Insight into Performance- and Reliability-Limiting Phenomena in GaN-Based Heterostructure Field-Effect Transistors by Means of Combined Experimental/Simulation Analysis
2017 Verzellesi, Giovanni; Chini, Alessandro; DE SANTI, Carlo; Meneghesso, Gaudenzio; Meneghini, Matteo; Rossetto, Isabella; Zanoni, Enrico
GaN HEMTs with p-GaN gate: Field-And time-dependent degradation
2017 Meneghesso, Gaudenzio; Meneghini, Matteo; Rossetto, Isabella; Canato, Eleonora; Bartholomeus, J.; DE SANTI, Carlo; Trivellin, Nicola; Zanoni, Enrico
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift
2017 Dalcanale, Stefano; Meneghini, Matteo; Tajalli, Alaleh; Rossetto, Isabella; Ruzzarin, Maria; Zanoni, Enrico; Meneghesso, Gaudenzio; Moens, Peter; Banerjee, Abhishek; Vandeweghe, Steven
Reliability and failure analysis in power GaN-HEMTs: An overview
2017 Meneghini, Matteo; Rossetto, Isabella; De Santi, Carlo; Rampazzo, Fabiana; Tajalli, Alaleh; Barbato, Alessandro; Ruzzarin, Maria; Borga, Matteo; Canato, Eleonora; Zanoni, Enrico; Meneghesso, Gaudenzio
Reliability physics of GaN HEMTs for power switching applications: role of the gate structure
2017 Zanoni, Enrico; Barbato, Alessandro; Bisi, Davide; DE SANTI, Carlo; Rampazzo, Fabiana; Rossetto, Isabella; Ruzzarin, Maria; Trivellin, Nicola; Chini, Alessandro; Verzellesi, Giovanni; Meneghesso, Gaudenzio; Meneghini, Matteo
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices
2017 Zanoni, Enrico; Barbato, Alessandro; Bisi, Davide; DE SANTI, Carlo; Rossetto, Isabella; Ruzzarin, Maria; Trivellin, Nicola; Chini, Alessandro; Meneghesso, Gaudenzio; Meneghini, Matteo
Secondary electroluminescence of GaN-on-Si RF HEMTs: Demonstration and physical origin
2017 Meneghini, Matteo; Barbato, Alessandro; Rossetto, Isabella; Favaron, Andrea; Silvestri, Marco; Lavanga, Simone; Sun, Haifeng; Brech, Helmut; Meneghesso, Gaudenzio; Zanoni, Enrico
Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System
2017 Ruzzarin, Maria; Barbato, Alessandro; Meneghini, Matteo; Rossetto, Isabella; Silvestri, Marco; Haeberlen, Oliver; Detzel, Thomas; Meneghesso, Gaudenzio; Zanoni, Enrico
Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes under HTRB Tests
2017 Hu, Jie; Stoffels, Steve; Zhao, Ming; Tallarico, Andrea Natale; Rossetto, Isabella; Meneghini, Matteo; Kang, Xuanwu; Bakeroot, Benoit; Marcon, Denis; Kaczer, Ben; Decoutere, Stefaan; Groeseneken, Guido