FREGOLENT, MANUEL

FREGOLENT, MANUEL  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 33 (tempo di esecuzione: 0.051 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results 2024 Fregolent, ManuelPiva, FrancescoBuffolo, MatteoSanti, Carlo DeCester, AndreaMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs 2024 Fregolent, ManuelFavero, DavideDe Santi, CarloMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + IEEE TRANSACTIONS ON POWER ELECTRONICS - -
Gallium Oxide and Gallium Nitride-based devices for high-power applications: characterization, reliability, and modelling 2024 FREGOLENT, MANUEL - - -
Investigation of Threshold Voltage Instability in GaN-on-Si Trench MOSFETs with SiO2 Gate Dielectric 2024 M. FregolentC. De SantiG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the GaN Marathon 2024
Investigation of Wafer-Level Dynamic Properties of p-GaN HEMTs in Hard Switching Conditions 2024 M. BoitoM. FregolentC. De SantiG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the GaN Marathon 2024
Modeling of the gate leakage in MOSFETs with Al2O3/β-Ga2O3 gate stack 2024 De Santi, CarloFregolent, ManuelBuffolo, MatteoMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + - - PROCEEDINGS OF SPIE PHOTONICS WEST 2024
Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation 2024 Fregolent, ManuelBoito, MircoDe Santi, CarloBuffolo, MatteoMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY - -
On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach 2024 Boito, M.Fregolent, M.De Santi, C.Meneghesso, G.Zanoni, E.Meneghini, M. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2024 PROCEEDINGS
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD 2024 Fregolent, ManuelFavero, DavideSanti, Carlo DeMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + JOURNAL OF SEMICONDUCTORS - -
Threshold Voltage Instability in Vertical β-Ga2O3 finFETs Investigated by Combined Electrical and Optical Techniques 2024 M. FregolentC. De SantiF. PivaG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the 5th International Workshop on Gallium Oxide and Related Materials
Trapping and Reliability Properties of Al2O3 Gate Dielectrics Obtained with Stacked ALD Deposition 2024 Manuel FregolentCarlo De SantiMatteo BuffoloGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini + - - Proceedings of 2024 E-MRS fall meeting
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors 2023 Fregolent, ManuelMarcuzzi, AlbertoSanti, Carlo DeMeneghesso, GaudenzioZanoni, EnricoBrusaterra, EnricoMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
GaN Vertical Devices: challenges for high performance and stability 2023 Matteo MeneghiniManuel FregolentCarlo De SantiMatteo BuffoloAlberto MarcuzziDavide FaveroGaudenzio MeneghessoEnrico Zanoni + - - Proceedings of ICNS-14 conference
Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric 2023 Fregolent, ManuelDe Santi, CarloMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + APPLIED PHYSICS LETTERS - -
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations 2023 Roccato N.Piva F.De Santi C.Buffolo M.Fregolent M.Pilati M.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS LETTERS - -
Novel models for the analysis of the dynamic performance of wide bandgap devices 2023 Carlo De SantiManuel FregolentNicola ModoloMatteo BuffoloFabiana RampazzoGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini - - Proceedings of the 37th Reliability of Compound Semiconductors Workshop (ROCS 2023)
Threshold voltage instability in SiO2-gate semi-vertical GaN trench MOSFETs grown on silicon substrate 2023 Fregolent, M.De Santi, C.Meneghesso, G.Zanoni, E.Meneghini, M. + MICROELECTRONICS RELIABILITY - -
Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques 2023 Fregolent, MMarcuzzi, ADe Santi, CMeneghesso, GZanoni, EMeneghini, M + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS Proceedings of the 2023 IEEE International Reliability Physics Symposium (IRPS 2023)
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 2022 Modolo N.Fregolent M.Masin F.Benato A.Bettini A.Buffolo M.De Santi C.Borga M.Vogrig D.Neviani A.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Conduction processes, modeling and deep levels in nitrogen-implanted β-Gallium oxide Schottky diodes 2022 Carlo De SantiManuel FregolentMatteo BuffoloGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini + - - Proceedings of the 4th International Workshop on Gallium Oxide and Related Materials, Nagano, Japan