MENEGHESSO, GAUDENZIO

MENEGHESSO, GAUDENZIO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Addressing the oxide-aperture dependency of the degradation of 845 nm VCSELs for silicon photonics 2025 Buffolo, MatteoZenari, MicheleDe Santi, CarloMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + - PROCEEDINGS OF SPIE Proceedings of SPIE - The International Society for Optical Engineering
Analysis of extrinsic failure mechanisms of high-power blue, red, and white LEDs for horticulture and street lighting 2025 Caria, AlessandroFraccaroli, RiccardoDe Santi, CarloBuffolo, MatteoTrivellin, NicolaZanoni, EnricoMeneghesso, GaudenzioMeneghini, Matteo + - PROCEEDINGS OF SPIE Proceedings of SPIE - The International Society for Optical Engineering
Changes in the extraction and collection efficiency of GaN-based MQW solar cells under optical step-stress 2025 Nicoletto M.Caria A.Roccato N.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $\mu \mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applications 2025 Pieri, Francesco DeFregolent, ManuelSaro, MarcoCarlotto, AndreaBoito, MircoSanti, Carlo DeRampazzo, FabianaMeneghesso, GaudenzioMeneghini, MatteoZanoni, Enrico - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
Current Collapse in Buffer-Free GaN-on-SiC Power Transistors: Maxwell-Wagner Effect and Related Model 2025 Cavaliere, AlbertoModolo, NicolaSanti, Carlo DeMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs 2025 Zanoni, EnricoCarlotto, AndreaDe Pieri, FrancescoFregolent, ManuelSaro, MarcoRampazzo, FabianaDe Santi, CarloMeneghesso, GaudenzioMeneghini, Matteo - IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST IEEE MTT-S International Microwave Symposium Digest
Defects and reliability of UVC-LEDs 2025 Buffolo, MatteoPiva, FrancescoRoccato, NicolaDe Santi, CarloTrivellin, NicolaMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + - PROCEEDINGS OF SPIE Proceedings of SPIE - The International Society for Optical Engineering
Defects in InGaN QW structures: microscopic properties and modeling 2025 Meneghini, MatteoPiva, FrancescoRoccato, NicolaCaria, AlessandroRampazzo, FabianaDe Santi, CarloBuffolo, MatteoGasparotto, AndreaTrivellin, NicolaMeneghesso, GaudenzioZanoni, Enrico + - PROCEEDINGS OF SPIE Proceedings of SPIE - The International Society for Optical Engineering
Enhanced Gate Reliability of p-GaN/AlGaN/GaN HEMTs Due to Gate Hole Injection and Recombination 2025 Fregolent, ManuelDe Santi, CarloBoito, MircoRossetto, IsabellaMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + IEEE ELECTRON DEVICE LETTERS - -
Evidence for Avalanche Operation in Sub-Micrometer Power GaN HEMTs with p-GaN Gate 2025 Fraccaroli, RiccardoDell'Andrea, MatteoFregolent, ManuelBoito, MircoDe Santi, CarloMeneghesso, GaudenzioEleonora CanatoEnrico ZanoniRossetto, IsabellaMeneghini, Matteo + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase 2025 Fraccaroli R.Fregolent M.Boito M.De Santi C.Canato E.Rossetto I.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Hail Damage Investigation in Heterojunction Silicon Photovoltaic Modules: A Real-World Case Study 2025 Nicoletto M.Caria A.Trivellin N.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + IEEE JOURNAL OF PHOTOVOLTAICS - -
Hotspot analysis on a flexible PV mini-modules based on IBC solar cells 2025 P. JakuzaC. CasuF. PivaA. CariaM. BuffoloC. De SantiN. TrivellinG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of rete italiana fotovoltaico (IFV) 2025
Identification of Boron-related traps via Capacitance Spectroscopy in Diamond Schottky diodes 2025 Giacomo BiasinManuel FregolentMatteo BuffoloCarlo De SantiGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini + - - Proceedings of ICDCM 2025
Impact of drain-source leakage on the dynamic Ron of power HEMTs with p-GaN gate 2025 Longato S. L.Favero D.Nardo A.Meneghesso G.Zanoni E.De Santi C.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Interface-related VTH shift of SiC MOSFETs during constant current stress extracted from charge pumping measurements 2025 Marcuzzi A.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Investigating the optical degradation of InAs quantum dot lasers on silicon through combined electro-optical characterization and gain measurements 2025 Zenari M.Buffolo M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + JPHYS PHOTONICS - -
Long-term (8000 h) reliability and failures of high-power LEDs for outdoor lighting stressed at high ambient temperatures 2025 Caria A.Fraccaroli R.De Santi C.Buffolo M.Trivellin N.Zanoni E.Meneghesso G.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Modeling Cracks in Silicon-Heterojunction Photovoltaic Modules: A Real-World Case Study 2025 Nicoletto, MarcoCaria, AlessandroTrivellin, NicolaDe Santi, CarloBuffolo, MatteoMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + IEEE JOURNAL OF PHOTOVOLTAICS - -
Modeling of Transport Mechanisms in Silicon Heterojunction Solar Cells: Trap-Assisted Tunneling at the Emitter Interface 2025 Jessica Jazmine Nicole BarrantesNicola RoccatoCarlo De SantiMatteo BuffoloNicola TrivellinGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini + - - Proceeding of Rete IFV 2025