MASIN, FABRIZIO

MASIN, FABRIZIO  

Università di Padova  

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Risultati 1 - 18 di 18 (tempo di esecuzione: 0.024 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Study of the oxide trapping phenomena and their impact on the threshold voltage of lateral 4H-SiC MOSFETs 2023 MASIN, FABRIZIO - - -
Analysis and Modeling of VthShift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature 2022 Masin F.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS Proceedgins of 2022 IEEE International Reliability Physics Symposium (IRPS)
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 2022 Modolo N.Fregolent M.Masin F.Benato A.Bettini A.Buffolo M.De Santi C.Borga M.Vogrig D.Neviani A.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Cryogenic Ultra-Fast Bias Temperature Instability Trap Profiling of SiC MOSFETs 2022 Masin F.De Santi C.Meneghini M. + - PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS Proceedings of 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs 2022 Masin F.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Non-monotonic threshold voltage variation in 4H-SiC metal-oxide-semiconductor field-effect transistor: Investigation and modeling 2021 Masin F.De Santi C.Meneghini M.Meneghesso G.Zanoni E. + JOURNAL OF APPLIED PHYSICS - -
Review on the degradation of GaN-based lateral power transistors 2021 De Santi, C.Buffolo, M.Caria, A.Chiocchetta, F.Favero, D.Fregolent, M.Masin, F.Modolo, N.Nardo, A.Piva, F.Rampazzo, F.Trivellin, N.Gao, Z.Meneghini, M.Zanoni, E.Meneghesso, G. + E-PRIME, ADVANCES IN ELECTRICAL ENGINEERING, ELECTRONICS AND ENERGY - -
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions 2020 Masin, F.Meneghini, M.Canato, E.Barbato, A.De Santi, C.Zanoni, E.Meneghesso, G. + - - IEEE International Reliability Physics Symposium Proceedings
OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution 2020 Canato E.Meneghini M.De Santi C.Masin F.Zanoni E.Meneghesso G. + MICROELECTRONICS RELIABILITY - -
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 2019 Matteo MeneghiniCarlo De SantiAlessandro BarbatoMatteo BorgaEleonora CanatoFrancesca ChiocchettaElena FabrisZhan GaoFabrizio MasinKalparupa MukherjeeArianna NardoFabiana RampazzoMaria RuzzarinMehdi RzinAlaleh TajalliMarco BarbatoGaudenzio MeneghessoEnrico Zanoni - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Degradation physics of GaN-based lateral and vertical devices 2019 Meneghini M.De Santi C.Barbato A.Borga M.Canato E.CHIOCCHETTA, FRANCESCAFabris E.Masin F.Nardo A.Rampazzo F.Ruzzarin M.Tajalli A.Barbato M.Meneghesso G.Zanoni E. - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping 2019 Canato E.Meneghini M.Nardo A.Masin F.Barbato A.Barbato M.Zanoni E.Meneghesso G. + MICROELECTRONICS RELIABILITY - -
Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress 2019 MASIN, FABRIZIOMeneghini M.Canato E.De Santi C.Zanoni E.Meneghesso G. + APPLIED PHYSICS LETTERS - -
Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate 2019 Canato E.Masin F.Borga M.Zanoni E.Meneghini M.Meneghesso G. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 2019 C. De SantiM. MeneghiniA. BarbatoM. BorgaE. CanatoF. ChiocchettaE. FabrisZ. GaoF. MasinK. MukherjeeA. NardoM. RuzzarinM. RzinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of MATERIALS RESEARCH MEETING 2019 (MRM2019)
Conduction mechanisms in p-Gate AlGaN/GaN high-electron-mobility transistors 2018 F. MasinM. Meneghini + - - Proceedings of the GaN Marathon 2.0
Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors 2018 MASIN, FABRIZIOMeneghini, MatteoZanoni, EnricoMeneghesso, Gaudenzio + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 2018 G. MeneghessoM. MeneghiniC. De SantiA. BarbatoM. BarbatoM. BorgaE. CanatoE. FabrisF. MasinM. RuzzarinA. TajalliE. Zanoni - - Proceedings of the 2018 International Workshop on Nitride Semiconductors (IWN 2018)