DE SANTI, CARLO
 Distribuzione geografica
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Continente #
NA - Nord America 20.223
AS - Asia 14.673
EU - Europa 11.376
AF - Africa 3.633
SA - Sud America 2.895
OC - Oceania 345
Continente sconosciuto - Info sul continente non disponibili 173
Totale 53.318
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Nazione #
US - Stati Uniti d'America 18.400
SG - Singapore 5.105
IT - Italia 2.946
CN - Cina 2.656
BR - Brasile 1.659
HK - Hong Kong 1.659
IE - Irlanda 1.244
VN - Vietnam 1.017
PL - Polonia 993
DE - Germania 871
FI - Finlandia 557
FR - Francia 448
IN - India 402
GB - Regno Unito 384
KR - Corea 349
NL - Olanda 338
RU - Federazione Russa 327
JP - Giappone 319
AT - Austria 277
SE - Svezia 265
TW - Taiwan 261
AR - Argentina 234
BJ - Benin 216
TR - Turchia 216
UA - Ucraina 197
MX - Messico 174
ZA - Sudafrica 162
ES - Italia 161
ID - Indonesia 158
EC - Ecuador 155
CH - Svizzera 147
BE - Belgio 146
IQ - Iraq 134
CA - Canada 130
MA - Marocco 124
VE - Venezuela 119
CV - Capo Verde 118
GR - Grecia 118
CL - Cile 117
CI - Costa d'Avorio 116
SA - Arabia Saudita 116
CO - Colombia 115
PY - Paraguay 115
AL - Albania 111
AO - Angola 111
EG - Egitto 110
IR - Iran 109
IL - Israele 108
PA - Panama 108
UZ - Uzbekistan 108
UY - Uruguay 106
BW - Botswana 105
DZ - Algeria 105
MY - Malesia 103
GT - Guatemala 101
JM - Giamaica 101
DK - Danimarca 100
DO - Repubblica Dominicana 100
GA - Gabon 99
MK - Macedonia 99
NI - Nicaragua 99
RO - Romania 99
SK - Slovacchia (Repubblica Slovacca) 99
RS - Serbia 98
BA - Bosnia-Erzegovina 97
CZ - Repubblica Ceca 97
MR - Mauritania 96
PE - Perù 96
KE - Kenya 95
BB - Barbados 93
KG - Kirghizistan 93
BO - Bolivia 91
MD - Moldavia 91
AZ - Azerbaigian 90
GN - Guinea 90
HN - Honduras 90
PH - Filippine 90
PK - Pakistan 90
BG - Bulgaria 89
LA - Repubblica Popolare Democratica del Laos 89
MZ - Mozambico 89
NP - Nepal 89
HU - Ungheria 88
MW - Malawi 88
BY - Bielorussia 87
CW - ???statistics.table.value.countryCode.CW??? 87
BD - Bangladesh 86
CG - Congo 86
JO - Giordania 86
YT - Mayotte 86
ZM - Zambia 86
AE - Emirati Arabi Uniti 85
CY - Cipro 85
GF - Guiana Francese 85
HR - Croazia 85
PR - Porto Rico 85
NO - Norvegia 84
SN - Senegal 84
TN - Tunisia 84
UG - Uganda 84
Totale 49.140
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Città #
Singapore 2.608
Ashburn 2.414
Fairfield 2.159
Hong Kong 1.513
Woodbridge 1.224
Dublin 1.202
Santa Clara 1.064
Houston 1.024
Beijing 961
Chandler 914
Padova 850
Bytom 812
Seattle 779
Cambridge 759
Ann Arbor 710
Wilmington 598
Boardman 561
Los Angeles 438
Ho Chi Minh City 368
Munich 337
Princeton 256
San Diego 254
Medford 252
Helsinki 220
Chicago 219
Padua 214
Cotonou 212
New York 199
Hefei 196
Des Moines 194
Hanoi 193
Riese Pio X 168
São Paulo 163
Vienna 160
Turku 158
Buffalo 145
Guangzhou 130
Tokyo 128
Nuremberg 121
Abidjan 107
Warsaw 107
Milan 104
Leesburg 102
Shanghai 102
Redondo Beach 100
Praia 99
London 97
Managua 97
Tashkent 96
Seoul 95
Panama City 94
Libreville 93
Montevideo 93
Nouakchott 91
Luanda 89
Salt Lake City 89
Conakry 87
Lusaka 85
Bishkek 84
Nairobi 84
Baku 82
Dakar 82
Kampala 82
Amman 81
Bridgetown 78
Maputo 78
Nanjing 78
Phnom Penh 78
Ulan Bator 76
Kigali 75
Antananarivo 74
Vientiane 73
Gaborone 72
Bamako 71
Dushanbe 71
Johannesburg 71
Nassau 71
Brooklyn 70
Minsk 70
Accra 69
Stockholm 68
Willemstad 68
Castries 67
Rome 67
Riga 66
Havana 65
Noumea 65
Dallas 64
Harare 63
Kingston 63
Lima 63
Podgorica 63
Yerevan 63
Amsterdam 62
Kingstown 62
Lappeenranta 62
Kinshasa 60
San José 60
Zurich 60
Brazzaville 59
Totale 29.644
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Nome #
Vertical GaN devices: Process and reliability 437
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 386
Semi-Transparent Perovskite Solar Cells: Performance and Perspectives 379
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs 317
On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach 280
Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices 265
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes 257
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 237
Comparison between Cu(In,Ga)Se2 solar cells with different back contacts submitted to current stress 228
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 227
GaN-based InGaN/GaN MQWs solar cells for innovative applications: performance and modeling 222
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 210
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives 209
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 206
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal 205
Degradation physics of GaN-based lateral and vertical devices 201
Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 mu m AlGaN/GaN HEMTs 195
Modeling the optical degradation kinetics of UV-C LEDs 192
Analysis of the mechanisms limiting the reliability of retrofit LED lamps 192
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs 191
Defects in GaN-based LEDs: Impact on internal quantum efficiency and on reliability 188
Trapping and Reliability Properties of Al2O3 Gate Dielectrics Obtained with Stacked ALD Deposition 187
Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase 186
Degradation mechanisms of devices for optoelectronics and power electronics based on Gallium Nitride heterostructures 186
Positive and negative threshold voltage instabilities in GaN-based transistors 185
Reliability of blue-emitting Eu2+-doped phosphors for laser-lighting applications 184
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 184
Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors 182
Defect-Related Degradation of AlGaN-Based UV-B LEDs 180
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs 179
Failure causes and mechanisms of retrofit LED lamps 177
Demonstration of avalanche capability in polarization-doped vertical GaN pn diodes: Study of walkout due to residual carbon concentration 177
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 174
Characterization and C-DLTS analysis of antimony selenide solar cells 173
Power GaN HEMT degradation: From time-dependent breakdown to hot-electron effects 173
Evidence for avalanche generation in reverse-biased InGaN LEDs 173
Aging behavior, reliability, and failure physics of GaN-based optoelectronic components 171
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs 170
GaN-based lateral and vertical devices: physical mechanisms limiting stability and reliability 169
Towards high reliability GaN LEDs: Understanding the physical origin of gradual and catastrophic failure 168
Study and characterization of GaN MOS capacitors: Planar vs trench topographies 167
GaN-based laser wireless power transfer system 167
Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors 167
Reliability and failure analysis in power GaN-HEMTs: An overview 164
Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications 163
Field-dependent degradation mechanisms in GaN-based HEMTs 162
Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities 162
Defect incorporation in In-containing layers and quantum wells: Experimental analysis via deep level profiling and optical spectroscopy 161
Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis 161
Degradation processes and origin in InGaN-based high-power photodetectors 160
Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment 160
Exploration of gate trench module for vertical GaN devices 160
Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency 159
Defect-generation and diffusion in (In)AlGaN-based UV-B LEDs submitted to constant current stress 159
Challenges for highly reliable GaN-based LEDs 159
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis 159
Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs 158
Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3MeV proton irradiation 158
Challenges and perspectives for vertical gan-on-si trench mos reliability: From leakage current analysis to gate stack optimization 158
Degradation mechanisms and lifetime of state-of-the-art green laser diodes 157
Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs 156
Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs 156
Understanding the degradation processes of GaN based LEDs submitted to extremely high current density 154
GaN HEMTs with p-GaN gate: Field-And time-dependent degradation 153
Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs 153
Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices 152
Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate 152
A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires 151
Reliability of Ultraviolet Light-Emitting Diodes 151
Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration 151
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate 149
Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon 149
Modeling of the Optical and Electrical Degradation of 845 nm VCSILs 149
ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms 148
Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress 148
Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs 148
Multi-gate Enhancement Mode AlGaN/GaN HEMT 147
Thermal droop in InGaN-based LEDs: Physical origin and dependence on material properties 147
Optical Power Degradation Related to Turn-On in Commercial 265 nm UV-C LEDs 146
Recoverable degradation of FAPbBr3 perovskite solar cells under reverse-bias: A combined electro-optical investigation 145
Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress 144
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias 144
Laser-based lighting: Experimental analysis and perspectives 143
Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation 143
Degradation of GaN-on-GaN vertical diodes submitted to high current stress 143
Breakdown Walkout in Polarization-Doped Vertical GaN Diodes 143
Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs 143
Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy 143
Degradation Mechanisms in High-Power LEDs: Thermal Analysis of Failure Modes 142
Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage 142
Fast Characterization of Power LEDs: Circuit Design and Experimental Results 141
Reliability of High Power LEDs: from gradual to catastrophic failure 141
Degradation of vertical GaN FETs under gate and drain stress 141
Defect-related degradation of III-V/Silicon 1.55 μm DBR laser diodes 141
Dependence of degradation on InGaN quantum well position: A study based on color coded structures 141
Long-term degradation of InGaN-based laser diodes: Role of defects 140
Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling 139
Solid State Lighting Systems for horticulture: Impact of LED degradation on light spectrum and intensity 139
Current induced degradation study on state of the art DUV LEDs 139
Analysis of Current Transport Layer Localized Resistivity Increase After High Stress on InGaN LEDs 138
Totale 17.658
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Categoria #
all - tutte 168.473
article - articoli 83.274
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 2.619
Totale 254.366
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.988 0 0 0 0 61 45 358 400 293 220 267 344
2021/20222.972 94 323 402 213 107 136 204 336 148 91 271 647
2022/20233.232 445 91 97 186 488 346 223 300 434 67 333 222
2023/20243.884 306 537 454 376 288 465 306 172 189 256 265 270
2024/202511.956 105 699 582 608 1.310 963 624 983 703 438 1.987 2.954
2025/202623.809 2.156 3.154 6.608 7.083 4.808 0 0 0 0 0 0 0
Totale 53.947