This paper reports an extensive analysis of the properties of the deep level responsible for the degradation of InGaN-based laser diodes. The analysis is based on combined optical measurements and Deep-Level Transient Spectroscopy (DLTS) investigation. Results indicate that stress induces a significant increase in threshold current of the devices, which is strongly correlated to the increase in the concentration of a deep level (DL) detected by DLTS. The DL involved in the degradation process is located 0.35–0.45 eV below the conduction band. 2D simulation indicates that degradation occurs within the quantum-well region.

Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy

MENEGHINI, MATTEO;DE SANTI, CARLO;TRIVELLIN, NICOLA;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2011

Abstract

This paper reports an extensive analysis of the properties of the deep level responsible for the degradation of InGaN-based laser diodes. The analysis is based on combined optical measurements and Deep-Level Transient Spectroscopy (DLTS) investigation. Results indicate that stress induces a significant increase in threshold current of the devices, which is strongly correlated to the increase in the concentration of a deep level (DL) detected by DLTS. The DL involved in the degradation process is located 0.35–0.45 eV below the conduction band. 2D simulation indicates that degradation occurs within the quantum-well region.
2011
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2477768
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