This work reports on the effects of high current stress on InGaN-based light-emitting diodes (LEDs.) The analyzed devices are high power blue LEDs with an emitting area of 1 mm2 subjected to a constant current stress at increasing current until the catastrophic device failure. By means of optical, electrical and photoluminescence analysis we hypothesize that the optical power decrease is related to a degradation in the current transport layers of the devices. The effect has been modelized as a gradual and localized increase in the current transport layer resistance; the model has been validated by means of SPICE electrical simulations. The results clearly indicate that, to extend the operating range of high-power devices, it is crucial to control the current crowding effect, which is here considered to play a significant role in the degradation in the current transport layer.
Analysis of Current Transport Layer Localized Resistivity Increase After High Stress on InGaN LEDs
Trivellin, Nicola;Buffolo, Matteo;De Santi, Carlo;Zanoni, Enrico;Meneghesso, Gaudenzio;Meneghini, Matteo
2023
Abstract
This work reports on the effects of high current stress on InGaN-based light-emitting diodes (LEDs.) The analyzed devices are high power blue LEDs with an emitting area of 1 mm2 subjected to a constant current stress at increasing current until the catastrophic device failure. By means of optical, electrical and photoluminescence analysis we hypothesize that the optical power decrease is related to a degradation in the current transport layers of the devices. The effect has been modelized as a gradual and localized increase in the current transport layer resistance; the model has been validated by means of SPICE electrical simulations. The results clearly indicate that, to extend the operating range of high-power devices, it is crucial to control the current crowding effect, which is here considered to play a significant role in the degradation in the current transport layer.File | Dimensione | Formato | |
---|---|---|---|
Analysis_of_Current_Transport_Layer_Localized_Resistivity_Increase_After_High_Stress_on_InGaN_LEDs.pdf
accesso aperto
Tipologia:
Published (publisher's version)
Licenza:
Creative commons
Dimensione
2.26 MB
Formato
Adobe PDF
|
2.26 MB | Adobe PDF | Visualizza/Apri |
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.