We report on an extensive study of single- (SH) and double-heterostructure (DH) HEMTs based on gallium nitride, for power switching applications. The analysis is based on dc, pulsed and breakdown measurements, which were carried out on five different epitaxial structures. © 2013 IEEE.
GaN-HEMTs devices with single- and double-heterostructure for power switching applications
MENEGHESSO, GAUDENZIO;ZANANDREA, ALBERTO;STOCCO, ANTONIO;ROSSETTO, ISABELLA;DE SANTI, CARLO;RAMPAZZO, FABIANA;MENEGHINI, MATTEO;ZANONI, ENRICO;
2013
Abstract
We report on an extensive study of single- (SH) and double-heterostructure (DH) HEMTs based on gallium nitride, for power switching applications. The analysis is based on dc, pulsed and breakdown measurements, which were carried out on five different epitaxial structures. © 2013 IEEE.
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