Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes

This paper presents a study of the effects of combined electrical and thermal stress tests on commercially-available InGaN-based blue laser diodes. By means of electrical and optical measurements, we have found that stress has two major consequences: (i) an initial decrease in threshold current, which is ascribed to the increase in the activation of p-type dopant, and (ii) a subsequent increase in threshold current, which - based on optical and electrical characterization - is ascribed to the generation/propagation of non-radiative defects within the active region of the devices.