Optical and electrical degradation of novel micro-transfer-printed VCSILs is investigated. Modeling of experimental data suggests that the main degradation mechanism is represented by the relocation of impurities, originating from the p-side, toward the active region.
Modeling of the Optical and Electrical Degradation of 845 nm VCSILs
M. Buffolo;M. Zenari;M. Fornasier;C. De Santi;G. Meneghesso;E. Zanoni;M. Meneghini
2023
Abstract
Optical and electrical degradation of novel micro-transfer-printed VCSILs is investigated. Modeling of experimental data suggests that the main degradation mechanism is represented by the relocation of impurities, originating from the p-side, toward the active region.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.