ROSSETTO, ISABELLA
 Distribuzione geografica
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Continente #
NA - Nord America 6.414
AS - Asia 3.488
EU - Europa 1.777
AF - Africa 592
SA - Sud America 518
OC - Oceania 58
Continente sconosciuto - Info sul continente non disponibili 27
Totale 12.874
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Nazione #
US - Stati Uniti d'America 6.089
SG - Singapore 1.099
CN - Cina 732
VN - Vietnam 461
IT - Italia 459
BR - Brasile 283
HK - Hong Kong 266
DE - Germania 153
PL - Polonia 151
FR - Francia 140
IN - India 133
FI - Finlandia 106
GB - Regno Unito 99
SE - Svezia 85
JP - Giappone 70
BD - Bangladesh 63
RU - Federazione Russa 62
CA - Canada 58
KR - Corea 53
TW - Taiwan 50
NL - Olanda 49
IQ - Iraq 47
AR - Argentina 45
TR - Turchia 43
BJ - Benin 37
ID - Indonesia 36
UA - Ucraina 36
SA - Arabia Saudita 34
AT - Austria 33
BE - Belgio 33
CI - Costa d'Avorio 31
PK - Pakistan 31
EC - Ecuador 30
ZA - Sudafrica 29
UZ - Uzbekistan 28
IE - Irlanda 27
PH - Filippine 27
CO - Colombia 26
ES - Italia 25
MX - Messico 25
CL - Cile 24
PT - Portogallo 24
VE - Venezuela 24
PY - Paraguay 22
HN - Honduras 21
MA - Marocco 21
DO - Repubblica Dominicana 20
JM - Giamaica 20
MR - Mauritania 20
AE - Emirati Arabi Uniti 19
LV - Lettonia 19
PE - Perù 19
CW - ???statistics.table.value.countryCode.CW??? 18
DZ - Algeria 18
ET - Etiopia 18
NI - Nicaragua 18
SO - Somalia 18
TH - Thailandia 18
TJ - Tagikistan 18
UY - Uruguay 18
BB - Barbados 17
GN - Guinea 17
IL - Israele 17
PS - Palestinian Territory 17
SN - Senegal 17
CY - Cipro 16
DK - Danimarca 16
GE - Georgia 16
JO - Giordania 16
ME - Montenegro 16
MG - Madagascar 16
NP - Nepal 16
PA - Panama 16
ZW - Zimbabwe 16
AO - Angola 15
CH - Svizzera 15
CZ - Repubblica Ceca 15
EG - Egitto 15
GA - Gabon 15
LB - Libano 15
RS - Serbia 15
SK - Slovacchia (Repubblica Slovacca) 15
TN - Tunisia 15
AL - Albania 14
AM - Armenia 14
AU - Australia 14
BO - Bolivia 14
BW - Botswana 14
GP - Guadalupe 14
GR - Grecia 14
KZ - Kazakistan 14
MD - Moldavia 14
MY - Malesia 14
NC - Nuova Caledonia 14
NG - Nigeria 14
NO - Norvegia 14
AZ - Azerbaigian 13
BA - Bosnia-Erzegovina 13
BF - Burkina Faso 13
CR - Costa Rica 13
Totale 12.279
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Città #
San Jose 719
Ashburn 692
Fairfield 684
Singapore 641
Woodbridge 543
Houston 378
Seattle 294
Ann Arbor 282
Hong Kong 243
Cambridge 221
Wilmington 215
Chandler 210
Santa Clara 208
Beijing 171
Ho Chi Minh City 141
Bytom 120
Los Angeles 118
Boardman 113
Hanoi 110
Princeton 64
Lauterbourg 63
Medford 62
Chicago 55
Padova 54
Des Moines 51
Munich 51
Guangzhou 49
Padua 49
San Diego 48
Tokyo 48
New York 47
Helsinki 43
Bengaluru 38
Cotonou 36
Hefei 36
Seoul 33
São Paulo 30
Nanjing 29
Orem 29
Abidjan 28
Da Nang 28
Tashkent 26
Milan 23
Roxbury 22
Dublin 21
London 21
Redondo Beach 21
Toronto 21
Brooklyn 20
Buffalo 20
Haiphong 20
Salt Lake City 20
Vienna 20
Warsaw 20
Baghdad 19
Council Bluffs 19
Amsterdam 18
Johannesburg 18
Managua 18
Chennai 17
Conakry 17
Dakar 17
Dushanbe 17
Manchester 17
Nouakchott 17
Rome 17
Willemstad 17
Riga 16
Amman 15
Frankfurt am Main 15
Libreville 15
Montreal 15
Antananarivo 14
Atlanta 14
Hargeisa 14
Jeddah 14
Panama City 14
Shenyang 14
Addis Ababa 13
Bridgetown 13
Brussels 13
Denver 13
Harare 13
Istanbul 13
Luanda 13
Lusaka 13
Montevideo 13
Phoenix 13
Podgorica 13
Tampa 13
Accra 12
Baku 12
Quito 12
Stockholm 12
Turku 12
Vicenza 12
Bamako 11
Dallas 11
Gaborone 11
Kampala 11
Totale 8.009
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Nome #
On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach 371
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal 289
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 282
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 282
From GaAs to GaN technology: study of limits and reliability of High Electron Mobility Transistors 259
Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase 255
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 238
ESD sensitivity of a GaAs MMIC microwave power amplifier 235
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs 233
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 231
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs 212
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements 210
Reliability and failure analysis in power GaN-HEMTs: An overview 210
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 205
Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena 201
Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities 201
Field-dependent degradation mechanisms in GaN-based HEMTs 197
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift 197
Reliability of GaN-Based Power Devices 195
Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs 194
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs 193
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs 193
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate 193
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs 191
Evidence of Hot-Electron Degradation in GaN-based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress 188
Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes under HTRB Tests 188
Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs 188
Trapping phenomena in AlGaN/GaN HEMTs: A study based on pulsed and transient measurements 186
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 185
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level 183
Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation 182
Secondary electroluminescence of GaN-on-Si RF HEMTs: Demonstration and physical origin 179
Experimental Demonstration of Avalanche operation in lateral normally-off 100 V GaN HEMTs 178
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate 177
Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits 176
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences 176
Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress 176
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure 176
GaN HEMTs with p-GaN gate: Field-And time-dependent degradation 176
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs 173
Dielectric related issues in GaN based MIS HEMTs 171
Reliability and parasitic issues in GaN-based power HEMTs: A review 170
Reliability of Gallium Nitride microwave transistors: A framework for the evaluation of failure mechanisms and instabilities, from accelerated testing to failure analysis and process improvement 169
Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics 168
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate 167
Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress 166
Field-related failure of GaN-on-Si HEMTs: Dependence on device geometry and passivation 166
Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors 163
Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs 163
Reliability of Power Devices: Bias-Induced Threshold Voltage Instability and Dielectric Breakdown in GaN MIS-HEMTs 162
Review on the degradation of GaN-based lateral power transistors 161
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis 161
Gate stability of GaN-Based HEMTs with P-Type Gate 153
Coupled experimental/simulation analysis as a tool for probing trap-related and high-electric-field phenomena in GaN HEMTs 148
Parasitic effects of buffer design on static and dynamic parameters of AlGaN/GaN High Electron Mobility Transistors 146
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 145
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices 144
A novel high voltage and high speed measurement system for dynamic RON measurements in GaN‐based high mobility transistors (HEMTs) 143
Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs 139
Evidence for Avalanche Operation in Sub-Micrometer Power GaN HEMTs with p-GaN Gate 135
Reliability physics of GaN HEMTs for power switching applications: role of the gate structure 119
TLP effects on normally-off p-GaN gate power HEMTs with Schottky gate 110
Instability of the breakdown voltage and leakage current in GaAs pseudomorphic HEMTs 107
On the investigation of ESD Failure mechanisms in AlGaN/GaN RF HEMTs 107
Gaining Insight into Performance- and Reliability-Limiting Phenomena in GaN-Based Heterostructure Field-Effect Transistors by Means of Combined Experimental/Simulation Analysis 103
Normally-off HEMTs with p-GaN Gate: Stability and Lifetime Extrapolation 100
Field- and time-dependent degradation of GaN HEMTs 99
Impact of iron doping on buffer traps and current collapse in GaN-based HEMTs 97
GaN Devices: Technology, Reliability-Limiting Processes and ESD Failures 96
Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System 83
Modeling of the gate leakage and forward gate reliability in Schottky-gate p-GaN HEMTs 81
Enhanced Gate Reliability of p-GaN/AlGaN/GaN HEMTs Due to Gate Hole Injection and Recombination 75
Reliability and trapping issues in GaN based MIS HEMTs 75
Gate leakage modeling and reliability in forward gate bias of p-GaN HEMTs with Schottky-gate 65
Experimental Evidence of Sustainable Avalanche Operation in E-Mode GaN HEMTs 58
Evidence for Avalanche and its Role in Lateral and Vertical Gallium Nitride Devices 57
Modeling the Changes in the Electrical Properties of Vertical GaN-on-GaN pin Diodes Under Electrical Stress 40
Totale 12.966
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Categoria #
all - tutte 35.104
article - articoli 18.086
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.054
Totale 54.244
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202154 0 0 0 0 0 0 0 0 0 0 0 54
2021/2022742 15 126 85 48 40 23 37 86 42 15 56 169
2022/2023617 107 10 21 48 136 74 4 53 114 5 31 14
2023/2024358 33 39 38 30 24 45 49 16 11 8 28 37
2024/20251.577 9 78 62 70 205 136 49 169 86 40 289 384
2025/20266.627 253 595 860 998 791 299 821 685 601 406 309 9
Totale 12.966