ROSSETTO, ISABELLA
 Distribuzione geografica
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Continente #
NA - Nord America 4.109
EU - Europa 559
AS - Asia 444
AF - Africa 3
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 2
SA - Sud America 1
Totale 5.120
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Nazione #
US - Stati Uniti d'America 4.106
CN - Cina 262
IT - Italia 218
SG - Singapore 122
FI - Finlandia 79
SE - Svezia 63
DE - Germania 57
FR - Francia 41
GB - Regno Unito 36
IN - India 16
TW - Taiwan 15
UA - Ucraina 15
KR - Corea 11
BE - Belgio 10
JP - Giappone 10
NL - Olanda 8
IE - Irlanda 7
GR - Grecia 5
VN - Vietnam 5
AT - Austria 3
ES - Italia 3
RO - Romania 3
AU - Australia 2
CA - Canada 2
CH - Svizzera 2
MA - Marocco 2
RU - Federazione Russa 2
SK - Slovacchia (Repubblica Slovacca) 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BR - Brasile 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
EU - Europa 1
HR - Croazia 1
ID - Indonesia 1
KZ - Kazakistan 1
ME - Montenegro 1
PR - Porto Rico 1
RS - Serbia 1
SA - Arabia Saudita 1
SC - Seychelles 1
Totale 5.120
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Città #
Fairfield 684
Woodbridge 543
Houston 372
Ashburn 359
Seattle 291
Ann Arbor 282
Cambridge 219
Wilmington 213
Chandler 209
Santa Clara 184
Boardman 108
Singapore 90
Beijing 75
Princeton 64
Medford 62
Des Moines 51
San Diego 48
Padova 40
Helsinki 34
Guangzhou 33
Nanjing 27
Roxbury 22
Shenyang 12
Nanchang 11
Mestre 10
Hebei 9
Bengaluru 8
Taipei 8
Dublin 7
Jiaxing 7
London 7
Norwalk 7
Washington 7
Borås 6
Cagliari 6
Munich 6
New York 6
Seoul 6
Chicago 5
Dong Ket 5
Hefei 5
Indiana 5
Jinan 5
Milan 5
Tianjin 5
Tokyo 5
Hangzhou 4
Rockville 4
Bologna 3
Edinburgh 3
Jacksonville 3
Leuven 3
New Bedfont 3
Orange 3
Redwood City 3
Taichung 3
Zhengzhou 3
Beauvechain 2
Bratislava 2
Brussels 2
Chennai 2
Duncan 2
Ferrara 2
Fremont 2
Huelva 2
Imzouren 2
Islington 2
Kharkiv 2
Kilburn 2
Kunming 2
Leawood 2
Magdeburg 2
Ningbo 2
Ogden 2
Phoenix 2
Portland 2
Ravenna 2
Riese Pio X 2
Sainte-Croix 2
Shanghai 2
Somma Vesuviana 2
Virginia Beach 2
Xi'an 2
Zhubei 2
's-Hertogenbosch 1
Aachen 1
Acton 1
Almaty 1
Amsterdam 1
Andover 1
Aprilia 1
Athens 1
Auburn Hills 1
Azzano Decimo 1
Bangalore 1
Belgrade 1
Berlin 1
Bristol 1
Canberra 1
Carlisle 1
Totale 4.278
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Nome #
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 165
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 147
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 145
Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena 115
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 114
Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities 110
Evidence of Hot-Electron Degradation in GaN-based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress 109
ESD sensitivity of a GaAs MMIC microwave power amplifier 108
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 108
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate 107
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs 107
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate 105
Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics 104
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal 103
GaN HEMTs with p-GaN gate: Field-And time-dependent degradation 102
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs 102
Trapping phenomena in AlGaN/GaN HEMTs: A study based on pulsed and transient measurements 101
Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes under HTRB Tests 101
Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits 98
Reliability and failure analysis in power GaN-HEMTs: An overview 98
Reliability of GaN-Based Power Devices 97
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements 92
Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors 89
Reliability of Power Devices: Bias-Induced Threshold Voltage Instability and Dielectric Breakdown in GaN MIS-HEMTs 89
Secondary electroluminescence of GaN-on-Si RF HEMTs: Demonstration and physical origin 89
Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs 89
From GaAs to GaN technology: study of limits and reliability of High Electron Mobility Transistors 88
Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs 87
Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress 87
Field-dependent degradation mechanisms in GaN-based HEMTs 86
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs 84
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences 84
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 84
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure 83
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift 83
Reliability and parasitic issues in GaN-based power HEMTs: A review 83
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs 82
Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs 81
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs 80
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate 79
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis 79
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs 76
Gate stability of GaN-Based HEMTs with P-Type Gate 75
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level 75
Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress 74
Field-related failure of GaN-on-Si HEMTs: Dependence on device geometry and passivation 74
Reliability of Gallium Nitride microwave transistors: A framework for the evaluation of failure mechanisms and instabilities, from accelerated testing to failure analysis and process improvement 69
A novel high voltage and high speed measurement system for dynamic RON measurements in GaN‐based high mobility transistors (HEMTs) 65
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 63
Dielectric related issues in GaN based MIS HEMTs 57
Parasitic effects of buffer design on static and dynamic parameters of AlGaN/GaN High Electron Mobility Transistors 56
Field- and time-dependent degradation of GaN HEMTs 52
On the investigation of ESD Failure mechanisms in AlGaN/GaN RF HEMTs 50
Impact of iron doping on buffer traps and current collapse in GaN-based HEMTs 49
Instability of the breakdown voltage and leakage current in GaAs pseudomorphic HEMTs 48
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices 45
Normally-off HEMTs with p-GaN Gate: Stability and Lifetime Extrapolation 43
Coupled experimental/simulation analysis as a tool for probing trap-related and high-electric-field phenomena in GaN HEMTs 41
Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs 40
Reliability physics of GaN HEMTs for power switching applications: role of the gate structure 32
Gaining Insight into Performance- and Reliability-Limiting Phenomena in GaN-Based Heterostructure Field-Effect Transistors by Means of Combined Experimental/Simulation Analysis 27
Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System 25
Reliability and trapping issues in GaN based MIS HEMTs 19
Totale 5.199
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Categoria #
all - tutte 18.398
article - articoli 9.958
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 630
Totale 28.986
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020690 0 0 0 0 0 84 92 129 125 157 80 23
2020/2021584 28 34 12 31 44 26 21 131 66 43 94 54
2021/2022742 15 126 85 48 40 23 37 86 42 15 56 169
2022/2023607 107 10 18 48 136 73 4 53 112 5 31 10
2023/2024345 33 38 37 29 22 45 48 14 8 7 28 36
2024/2025460 9 76 58 66 190 61 0 0 0 0 0 0
Totale 5.199