Displacement-damage induced degradation in InAlN/GaN structures is studied for different proton fluences, from 1∙10^14 p/cm2 to 4∙10^14 p/cm2, at 3MeV. DC analysis reveals that devices experience a VTH positive shift and an increase of the RON, following a linear trend with the proton radiation fluence, as a consequence of the creation of acceptor-like traps. Furthermore an increase of the diode gate current is noticed. Pulsed measurements indicate an increase of the so called “current collapse”, especially when a high gate drain voltage difference is applied, as a consequence of the performances variation in the dynamic max gm, VTH shift and RON
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences
ROSSETTO, ISABELLA;RAMPAZZO, FABIANA;GERARDIN, SIMONE;MENEGHINI, MATTEO;BAGATIN, MARTA;ZANANDREA, ALBERTO;PACCAGNELLA, ALESSANDRO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2014
Abstract
Displacement-damage induced degradation in InAlN/GaN structures is studied for different proton fluences, from 1∙10^14 p/cm2 to 4∙10^14 p/cm2, at 3MeV. DC analysis reveals that devices experience a VTH positive shift and an increase of the RON, following a linear trend with the proton radiation fluence, as a consequence of the creation of acceptor-like traps. Furthermore an increase of the diode gate current is noticed. Pulsed measurements indicate an increase of the so called “current collapse”, especially when a high gate drain voltage difference is applied, as a consequence of the performances variation in the dynamic max gm, VTH shift and RON
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