The aim of this work is to quantitatively investigate the influence of buffer doping on the current collapse of AlGaN/GaN HEMTs, and to analyze the contribution of trap states to the increase in current collapse detected after reverse-bias stress. The study was carried out on GaN-based HEMTs with increasing levels of iron doping in the buffer, which were submitted to drain current transient measurements and reversebias stress. Results demonstrate that the use of Fe-doping may significantly impact on current collapse; moreover, we demonstrate that the increase in current collapse detected after reverse-bias stress is not due to the generation of new types of defect, but to the increase in the signal of the defects which were already present before stress.

Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs

MENEGHINI, MATTEO;ROSSETTO, ISABELLA;BISI, DAVIDE;STOCCO, ANTONIO;CESTER, ANDREA;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2014

Abstract

The aim of this work is to quantitatively investigate the influence of buffer doping on the current collapse of AlGaN/GaN HEMTs, and to analyze the contribution of trap states to the increase in current collapse detected after reverse-bias stress. The study was carried out on GaN-based HEMTs with increasing levels of iron doping in the buffer, which were submitted to drain current transient measurements and reversebias stress. Results demonstrate that the use of Fe-doping may significantly impact on current collapse; moreover, we demonstrate that the increase in current collapse detected after reverse-bias stress is not due to the generation of new types of defect, but to the increase in the signal of the defects which were already present before stress.
2014
52nd IEEE International Reliability Physics Symposium
52nd IEEE International Reliability Physics Symposium
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3065524
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