The identification of failure modes and mechanisms which may affect the reliability of GaN-based High Electron Mobility Transistors is extremely important for the application of this technology to microwave and millimeter-wave systems, and for the development of high-efficiency GaN power electronics. GaN HEMT reliability has been the subject of a large number of studies which identifie specific failure modes, not previously observed in Si and GaAs devices.
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors
ZANONI, ENRICO;MENEGHESSO, GAUDENZIO;MENEGHINI, MATTEO;STOCCO, ANTONIO;RAMPAZZO, FABIANA;SILVESTRI, RICCARDO;ROSSETTO, ISABELLA;RONCHI, NICOLO'
2011
Abstract
The identification of failure modes and mechanisms which may affect the reliability of GaN-based High Electron Mobility Transistors is extremely important for the application of this technology to microwave and millimeter-wave systems, and for the development of high-efficiency GaN power electronics. GaN HEMT reliability has been the subject of a large number of studies which identifie specific failure modes, not previously observed in Si and GaAs devices.
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