MENEGHINI, MATTEO
MENEGHINI, MATTEO
Dipartimento di Ingegneria dell'Informazione - DEI
"Hot-plugging" of LED modules: Electrical characterization and device degradation
2013 DAL LAGO, Matteo; Meneghini, Matteo; Trivellin, Nicola; G., Mura; M., Vanzi; Meneghesso, Gaudenzio; Zanoni, Enrico
'Hole Redistribution' Model Explaining the Thermally Activated RONStress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs
2021 Zagni, N.; Chini, A.; Puglisi, F. M.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Pavan, P.; Verzellesi, G.
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal
2018 Rossetto, I.; Meneghini, M.; De Santi, C.; Pandey, Sudip; Gajda, M.; Hurkx, G. A. M.; Croon, J.; Šonský, J.; Meneghesso, G.; Zanoni, E.
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes
2009 Meneghini, Matteo; Trivellin, Nicola; Meneghesso, Gaudenzio; Zanoni, Enrico; U., Zehnder; B., Hahn
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes
2008 Meneghini, Matteo; Rigutti, L; Trevisanello, LORENZO ROBERTO; Cavallini, A; Meneghesso, Gaudenzio; Zanoni, Enrico
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs
2009 Pavesi, M; Rossi, F; Manfredi, M; Salviati, G; Meneghini, Matteo; Zanoni, Enrico
A new method for CdSexTe1-x band grading for high efficiency thin-absorber CdTe solar cells
2021 Artegiani, E.; Gasparotto, A.; Punathil, P.; Kumar, V.; Barbato, M.; Meneghini, M.; Meneghesso, G.; Piccinelli, F.; Romeo, A.
A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation
2023 Cavaliere, A.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects
2020 Modolo, N.; Meneghini, M.; Barbato, A.; Nardo, A.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Sicre, S.; Prechtl, G.; Curatola, G.
A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs
2020 Modolo, Nicola; Tang, Shun-Wei; Jiang, Hong-Jia; De Santi, Carlo; Meneghini, Matteo; Wu, Tian-Li
A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires
2016 Musolino, M.; Van Treeck, D; Tahraoui, A.; Scarparo, L.; DE SANTI, Carlo; Meneghini, Matteo; Zanoni, Enrico; Geelhaar, L.; Riechert, H.
A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs
2021 Modolo, N.; De Santi, C.; Minetto, A.; Sayadi, L.; Sicre, S.; Prechtl, G.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
A review of the reliability of integrated ir laser diodes for silicon photonics
2021 Buffolo, M.; De Santi, C.; Norman, J.; Shang, C.; Bowers, J. E.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs
2010 Meneghini, Matteo; Tazzoli, Augusto; Mura, G; Meneghesso, Gaudenzio; Zanoni, Enrico
A review on the reliability of GaN-based LEDs
2008 Meneghini, Matteo; Trevisanello, LORENZO ROBERTO; Meneghesso, Gaudenzio; Zanoni, Enrico
Accelerated life test of high brightness light emitting diodes
2008 Trevisanello, LORENZO ROBERTO; Meneghini, Matteo; Mura, G; Vanzi, M; Pavesi, M; Meneghesso, Gaudenzio; Zanoni, Enrico
Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization
2023 Zenari, Michele; Buffolo, Matteo; De Santi, Carlo; Norman, Justin; Hughes, Eamonn T.; Bowers, John E.; Herrick, Robert; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results
2024 Fregolent, Manuel; Piva, Francesco; Buffolo, Matteo; Santi, Carlo De; Cester, Andrea; Higashiwaki, Masataka; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects
2015 LA GRASSA, Marco; Meneghini, Matteo; DE SANTI, Carlo; Mandurrino, Marco; Goano, Michele; Bertazzi, Francesco; Zeisel, Roland; Galler, Bastian; Meneghesso, Gaudenzio; Zanoni, Enrico
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction
2013 Zanoni, Enrico; Meneghini, Matteo; Alessandro, Chini; Denis, Marcon; Meneghesso, Gaudenzio