MARCUZZI, ALBERTO
MARCUZZI, ALBERTO
Università di Padova
Interface-related VTH shift of SiC MOSFETs during constant current stress extracted from charge pumping measurements
2025 Marcuzzi, A.; Avramenko, M.; De Santi, C.; Moens, P.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements
2024 Marcuzzi, A.; Avramenko, M.; De Santi, C.; Moens, P.; Geenen, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements
2024 Marcuzzi, A.; Avramenko, M.; De Santi, C.; Geenen, F.; Moens, P.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives
2024 Buffolo, M.; Favero, D.; Marcuzzi, A.; Santi, Carlo De; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress
2024 Avramenko, M.; De Schepper, L.; Cano, J. -F.; Geenen, F.; Moens, P.; Marcuzzi, A.; De Santi, C.; Meneghini, M.
Vertical GaN Devices: Reliability Challenges and Lessons Learned from Si and SiC
2024 Meneghini, M.; Fregolent, M.; Zagni, N.; Hamadoui, Y.; Marcuzzi, A.; Favero, D.; De Santi, C.; Buffolo, M.; Tomasi, M.; Zappala, G.; Bahat-Treidel, E.; Brusaterra, E.; Brunner, F.; Hilt, O.; Huber, C.; Medjdoub, F.; Meneghesso, G.; Verzellesi, G.; Pavan, P.; Zanoni, E.
A Review of SiC Commercial Devices for Automotive: Properties and Challenges
2023 Marcuzzi, Alberto; Favero, Davide; DE SANTI, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors
2023 Zagni, Nicolò; Fregolent, Manuel; Verzellesi, Giovanni; Marcuzzi, Alberto; Santi, Carlo De; Meneghesso, Gaudenzio; Zanoni, Enrico; Treidel, Eldad Bahat; Brusaterra, Enrico; Brunner, Frank; Hilt, Oliver; Meneghini, Matteo; Pavan, Paolo
GaN Vertical Devices: challenges for high performance and stability
2023 Meneghini, Matteo; Fregolent, Manuel; Zagni, Nicolò; DE SANTI, Carlo; Bahat Treidel, Eldad; Brusaterra, Enrico; Brunner, Frank; Hilt, Oliver; Christianhuber, ; Buffolo, Matteo; Marcuzzi, Alberto; Favero, Davide; Del Fiol, Andrea; Verzellesi, Giovanni; Pavan, Paolo; Meneghesso, Gaudenzio; Zanoni, Enrico
GaN-on-Si Power HEMTs for Automotive: Current Status and Perspectives
2023 Favero, D.; Marcuzzi, A.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements
2023 Marcuzzi, Alberto; Avramenko, Marina; DE SANTI, Carlo; Geenen, Filip; Moens, Peter; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling
2023 Meneghini, M.; Marcuzzi, A.; Masin, F.; De Santi, C.; Avramenko, M.; Geenen, F.; Moens, P.; Meneghesso, G.; Zanoni, E.
Threshold voltage variation of SiC trench MOSFETs during TDDB stress
2023 Avramenko, Marina; Marcuzzi, Alberto; De Schepper, Luc; Cano, Jean-Francois; Geenen, Filip; DE SANTI, Carlo; Moens, Peter; Meneghini, Matteo
Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques
2023 Fregolent, M; Marcuzzi, A; De Santi, C; Treidel, Eb; Meneghesso, G; Zanoni, E; Meneghini, M
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs
2022 Fregolent, M; Boito, M; Marcuzzi, A; De Santi, C; Chiocchetta, F; Treidel, Eb; Wolf, M; Brunner, F; Hilt, O; Wurfl, J; Meneghesso, G; Zanoni, E; Meneghini, M