CARLOTTO, ANDREA

CARLOTTO, ANDREA  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 9 di 9 (tempo di esecuzione: 0.025 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Deep-Level Effects in Back-Barrier-Scaled GaN HEMTs 2026 De Pieri F.Carlotto A.Fregolent M.Cavaliere A.Saro M.Rampazzo F.De Santi C.Meneghesso G.Meneghini M.Zanoni E. + IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES - -
Origin of Deep Levels Responsible for Transconductance Overshoot in AlGaN/GaN HEMTs and Impact in Real-Life Operating Conditions 2026 Carlotto A.De Pieri F.Rossetto I.De Santi C.Fregolent M.Rampazzo F.Meneghini M.Meneghesso G.Zanoni E. - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS Proceedings of the 2026 IEEE International Reliability Physics Symposium (IRPS)
Study of Heavy-Ion-Induced Degradation in Si3N4MIM Capacitors for GaN Power Amplifiers 2026 Roy Chowdhury S.Rossetto I.De Santi C.Fregolent M.Carlotto A.Rampazzo F.De Pieri F.Meneghesso G.Meneghini M.Zanoni E. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS Proceedings of the 2026 IEEE International Reliability Physics Symposium (IRPS)
Transient Short-Channel Effects Induced by Si δ Doping in Buffer-Free LG=0.15 μm AlGaN/GaN HEMTs 2026 De Pieri F.De Santi C.Rossetto I.Carlotto A.Roy Chowdhury S.Saro M.Rampazzo F.Meneghini M.Meneghesso G.Zanoni E. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS Proceedings of the 2026 IEEE International Reliability Physics Symposium (IRPS)
Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $\mu \mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applications 2025 Pieri, Francesco DeFregolent, ManuelSaro, MarcoCarlotto, AndreaBoito, MircoSanti, Carlo DeRampazzo, FabianaMeneghesso, GaudenzioMeneghini, MatteoZanoni, Enrico - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs 2025 Zanoni, EnricoCarlotto, AndreaDe Pieri, FrancescoFregolent, ManuelSaro, MarcoRampazzo, FabianaDe Santi, CarloMeneghesso, GaudenzioMeneghini, Matteo - IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST IEEE MTT-S International Microwave Symposium Digest
Study of trapping mechanisms affecting AlGaN/GaN HEMTs adopting AlGaN back-barriers with different aluminum concentrations 2025 Carlotto, AndreaRampazzo, FabianaSaro, MarcoDe Pieri, FrancescoFregolent, ManuelDe Santi, CarloMeneghesso, GaudenzioMeneghini, MatteoZanoni, Enrico MICROELECTRONICS RELIABILITY - -
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects 2024 Saro, Marcode Pieri, FrancescoCarlotto, AndreaFornasier, MirkoRampazzo, FabianaDe Santi, CarloMeneghesso, GaudenzioMeneghini, MatteoZanoni, EnricoBisi, Davide + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2024 PROCEEDINGS
Scaling of GaN HEMTs for microwave and millimeter-wave applications: achieving control of short-channel effects, deep levels and reliability 2024 Enrico ZanoniMatteo BuffoloAndrea CarlottoFrancesco De PieriCarlo De SantiGaudenzio MeneghessoMatteo MeneghiniFabiana Rampazzo - - Proceedings of TWHM 2024