FORNASIER, MIRKO
FORNASIER, MIRKO
Dipartimento di Ingegneria dell'Informazione - DEI
Analysis of defect-related optical degradation of VCSILs for photonic integrated circuits
2023 Zenari, M.; Buffolo, M.; Fornasier, M.; De Santi, C.; Goyvaerts, J.; Grabowsky, A.; Gustavsson, J.; Kumari, S.; Stassren, A.; Baets, R.; Larsson, A.; Roelkens, G.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Analysis of trapping and detrapping mechanisms in 0.15 μm-gate AlGaN/GaN High Electron Mobility Transistors: explanation of dynamic behaviour of threshold voltage and on-resistance
2023 DE PIERI, Francesco; Fornasier, Mirko; Gao, Zhan; Rampazzo, Fabiana; DE SANTI, Carlo; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications
2022 Gao, Z.; Chiocchetta, F.; Fornasier, M.; Saro, M.; Stramare, E.; Tonello, A.; Sharma, C.; Modolo, N.; De Santi, C.; Rampazzo, F.; Meneghesso, G.; Meneghini, M.; Zanoni, E.; Jacquet, J-C.; Lacam, C.; Piotrowicz, S.; Oualli, M.; Michel, N.; Aroulanda, S.
Dynamic Behavior of Threshold Voltage and ID–VDS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect
2023 Gao, Zhan; De Santi, Carlo; Rampazzo, Fabiana; Saro, Marco; Fornasier, Mirko; Meneghesso, Gaudenzio; Meneghini, Matteo; Chini, Alessandro; Verzellesi, Giovanni; Zanoni, Enrico
Hot-electron trapping and electric field redistribution in 0.15 µm RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier
2022 Chiocchetta, F.; Gao, Z.; Fornasier, M.; Modolo, N.; De Santi, C.; Rampazzo, F.; Meneghini, M.; Meneghesso, G.; Zanoni, E.
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
2023 Zanoni, Enrico; Santi, Carlo De; Gao, Zhan; Buffolo, Matteo; Fornasier, Mirko; Saro, Marco; Pieri, Francesco De; Rampazzo, Fabiana; Meneghesso, Gaudenzio; Meneghini, Matteo; Zagni, Nicolò; Chini, Alessandro; Verzellesi, Giovanni
Modeling of the Optical and Electrical Degradation of 845 nm VCSILs
2023 Buffolo, M.; Zenari, M.; Fornasier, M.; De Santi, C.; Goyvaerts, J.; Grabowski, A.; Gustavsson, J.; Kumari, S.; Stassen, A.; Morthier, Geert; Baets, R.; Larsson, A.; Roelkens, G.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Thermally-activated failure mechanisms of 0.25 μm RF AlGaN/GaN HEMTs submitted to long-term life tests
2023 Gao, Z; Chiocchetta, F; Rampazzo, F; De Santi, C; Fornasier, M; Meneghesso, G; Meneghini, M; Zanoni, E
Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs
2023 Gao, Z.; Rampazzo, F; De Santi, C; Fornasier, M; Meneghesso, G; Meneghini, M; Blanck, H; Grunenputt, J; Sommer, D; Chen, Dy; Wen, Kh; Chen, Jt; Zanoni, E
Understanding the Optical Degradation of 845 nm Micro-Transfer-Printed VCSILs for Photonic Integrated Circuits
2023 Zenari, M; Buffolo, M; Fornasier, M; De Santi, C; Goyvaerts, J; Grabowski, A; Gustavsson, J; Kumari, S; Stassren, A; Baets, R; Larsson, A; Roelkens, G; Meneghesso, G; Zanoni, E; Meneghini, M