DE PIERI, FRANCESCO

DE PIERI, FRANCESCO  

Università di Padova  

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Risultati 1 - 9 di 9 (tempo di esecuzione: 0.022 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $\mu \mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applications 2025 Pieri, Francesco DeFregolent, ManuelSaro, MarcoCarlotto, AndreaBoito, MircoSanti, Carlo DeRampazzo, FabianaMeneghesso, GaudenzioMeneghini, MatteoZanoni, Enrico - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs 2025 Zanoni, EnricoCarlotto, AndreaDe Pieri, FrancescoFregolent, ManuelSaro, MarcoRampazzo, FabianaDe Santi, CarloMeneghesso, GaudenzioMeneghini, Matteo - IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST IEEE MTT-S International Microwave Symposium Digest
Self-Induced Photoionization of Traps in Buffer-Free AlGaN/GaN HEMTs 2025 De Pieri F.Fornasier M.Gao Z.Fregolent M.De Santi C.Rampazzo F.Meneghesso G.Meneghini M.Zanoni E. + IEEE ELECTRON DEVICE LETTERS - -
Study of trapping mechanisms affecting AlGaN/GaN HEMTs adopting AlGaN back-barriers with different aluminum concentrations 2025 Carlotto, AndreaRampazzo, FabianaSaro, MarcoDe Pieri, FrancescoFregolent, ManuelDe Santi, CarloMeneghesso, GaudenzioMeneghini, MatteoZanoni, Enrico MICROELECTRONICS RELIABILITY - -
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects 2024 Saro, Marcode Pieri, FrancescoCarlotto, AndreaFornasier, MirkoRampazzo, FabianaDe Santi, CarloMeneghesso, GaudenzioMeneghini, MatteoZanoni, EnricoBisi, Davide + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2024 PROCEEDINGS
Scaling of GaN HEMTs for microwave and millimeter-wave applications: achieving control of short-channel effects, deep levels and reliability 2024 Enrico ZanoniMatteo BuffoloAndrea CarlottoFrancesco De PieriCarlo De SantiGaudenzio MeneghessoMatteo MeneghiniFabiana Rampazzo - - Proceedings of TWHM 2024
Analysis of trapping and detrapping mechanisms in 0.15 μm-gate AlGaN/GaN High Electron Mobility Transistors: explanation of dynamic behaviour of threshold voltage and on-resistance 2023 Francesco De PieriMirko FornasierZhan GaoFabiana RampazzoCarlo De SantiMatteo MeneghiniGaudenzio MeneghessoEnrico Zanoni - - Proceedings of ICNS-14
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability 2023 Zanoni, EnricoSanti, Carlo DeGao, ZhanBuffolo, MatteoFornasier, MirkoSaro, MarcoPieri, Francesco DeRampazzo, FabianaMeneghesso, GaudenzioMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Transconductance overshoot as a signature of trapping effects at backbarrier interface of GaN HEMTs : dependence on device epitaxial structure 2023 Zhan GaoFrancesco De PieriCarlo De SantiFabiana RampazzoMatteo MeneghiniGaudenzio MeneghessoEnrico Zanoni + - - Proceedings of ICNS-14