DE PIERI, FRANCESCO

DE PIERI, FRANCESCO  

Università di Padova  

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Risultati 1 - 5 di 5 (tempo di esecuzione: 0.007 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Analysis of trapping and detrapping mechanisms in 0.15 μm-gate AlGaN/GaN High Electron Mobility Transistors: explanation of dynamic behaviour of threshold voltage and on-resistance 2023 Francesco De PieriMirko FornasierZhan GaoFabiana RampazzoCarlo De SantiMatteo MeneghiniGaudenzio MeneghessoEnrico Zanoni - - Proceedings of ICNS-14
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects 2024 Saro, Marcode Pieri, FrancescoCarlotto, AndreaFornasier, MirkoRampazzo, FabianaDe Santi, CarloMeneghesso, GaudenzioMeneghini, MatteoZanoni, EnricoBisi, Davide + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2024 PROCEEDINGS
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability 2023 Zanoni, EnricoSanti, Carlo DeGao, ZhanBuffolo, MatteoFornasier, MirkoSaro, MarcoPieri, Francesco DeRampazzo, FabianaMeneghesso, GaudenzioMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Scaling of GaN HEMTs for microwave and millimeter-wave applications: achieving control of short-channel effects, deep levels and reliability 2024 Enrico ZanoniMatteo BuffoloAndrea CarlottoFrancesco De PieriCarlo De SantiGaudenzio MeneghessoMatteo MeneghiniFabiana Rampazzo - - Proceedings of TWHM 2024
Transconductance overshoot as a signature of trapping effects at backbarrier interface of GaN HEMTs : dependence on device epitaxial structure 2023 Zhan GaoFrancesco De PieriCarlo De SantiFabiana RampazzoMatteo MeneghiniGaudenzio MeneghessoEnrico Zanoni + - - Proceedings of ICNS-14