RAMPAZZO, FABIANA
RAMPAZZO, FABIANA
Self-Induced Photoionization of Traps in Buffer-Free AlGaN/GaN HEMTs
2025 De Pieri, F.; Fornasier, M.; Gao, Z.; Fregolent, M.; De Santi, C.; Rampazzo, F.; Putcha, V.; Riet, E. V. D.; Hartskeerl, D.; Meneghesso, G.; Meneghini, M.; Zanoni, E.
Study of trapping mechanisms affecting AlGaN/GaN HEMTs adopting AlGaN back-barriers with different aluminum concentrations
2025 Carlotto, Andrea; Rampazzo, Fabiana; Saro, Marco; De Pieri, Francesco; Fregolent, Manuel; De Santi, Carlo; Meneghesso, Gaudenzio; Meneghini, Matteo; Zanoni, Enrico
Impact of the oxide aperture width on the degradation of 845 nm VCSELs for silicon photonics
2024 Zenari, Michele; Buffolo, Matteo; Rampazzo, Fabiana; De Santi, Carlo; Rossi, Francesca; Lazzarini, Laura; Goyvaerts, Jeroen; Grabowski, Alexander; Gustavsson, Johan; Baets, Roel; Larsson, Anders; Roelkens, Günther; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis
2024 Nicoletto, Marco; Caria, Alessandro; Rampazzo, Fabiana; De Santi, Carlo; Buffolo, Matteo; Rossi, Francesca; Huang, Xuanqui; Fu, Houqiang; Chen, Hong; Zhao, Yuji; Gasparotto, Andrea; Becht, Conny; Schwarz, Ulrich T.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Dynamic Behavior of Threshold Voltage and ID–VDS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect
2023 Gao, Zhan; De Santi, Carlo; Rampazzo, Fabiana; Saro, Marco; Fornasier, Mirko; Meneghesso, Gaudenzio; Meneghini, Matteo; Chini, Alessandro; Verzellesi, Giovanni; Zanoni, Enrico
Impact of high-temperature operating lifetime tests on the stability of 0.15 μm AlGaN/GaN HEMTs: a temperature-dependent analysis
2023 Pilati, M.; Buffolo, M.; Rampazzo, F.; Lambert, B.; Sommer, D.; Grünenpütt, J.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells
2023 Nicoletto, M; Caria, A; Rampazzo, F; De Santi, C; Buffolo, M; Mura, G; Rossi, F; Huang, Xq; Fu, Hq; Chen, H; Zhao, Yj; Meneghesso, G; Zanoni, E; Meneghini, M
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
2023 Zanoni, Enrico; Santi, Carlo De; Gao, Zhan; Buffolo, Matteo; Fornasier, Mirko; Saro, Marco; Pieri, Francesco De; Rampazzo, Fabiana; Meneghesso, Gaudenzio; Meneghini, Matteo; Zagni, Nicolò; Chini, Alessandro; Verzellesi, Giovanni
Novel approach of combined planar and cross-sectional defect analysis of stressed normally-on HEMT devices with leaky Schottky gates
2023 Graff, A.; Simon-Najasek, M.; Hübner, S.; Lejoyeux, M.; Altmann, F.; Gao, Zhan; Rampazzo, F.; Meneghini, M.; Zanoni, E.; Lambert, B.
Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs
2023 Gao, Z.; Rampazzo, F; De Santi, C; Fornasier, M; Meneghesso, G; Meneghini, M; Blanck, H; Grunenputt, J; Sommer, D; Chen, Dy; Wen, Kh; Chen, Jt; Zanoni, E
Failure Physics and Reliability of GaN-Based HEMTs for Microwave and Millimeter-Wave Applications: A Review of Consolidated Data and Recent Results
2022 Zanoni, E; Rampazzo, F; De Santi, C; Gao, Z; Sharma, C; Modolo, N; Verzellesi, G; Chini, A; Meneghesso, G; Meneghini, M
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
2022 Favero, D.; De Santi, C.; Mukherjee, K.; Borga, M.; Geens, K.; Chatterjee, U.; Bakeroot, B.; Decoutere, S.; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 mu m AlGaN/GaN HEMTs
2022 Chiocchetta, F; De Santi, C; Rampazzo, F; Mukherjee, K; Grunenputt, J; Sommer, D; Blanck, H; Lambert, B; Gerosa, A; Meneghesso, G; Zanoni, E; Meneghini, M
Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature
2021 Chiocchetta, F.; De Santi, C.; Rampazzo, F.; Meneghini, M.; Meneghesso, G.; Zanoni, E.
Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress
2021 Gao, Z.; Rampazzo, F.; Meneghini, M.; Modolo, N.; De Santi, C.; Blanck, H.; Stieglauer, H.; Sommer, D.; Grunenputt, J.; Kordina, O.; Chen, J. -T.; Jacquet, J. -C.; Lacam, C.; Piotrowicz, S.; Meneghesso, G.; Zanoni, E.
Review on the degradation of GaN-based lateral power transistors
2021 De Santi, C.; Buffolo, M.; Rossetto, I.; Bordignon, T.; Brusaterra, E.; Caria, A.; Chiocchetta, F.; Favero, D.; Fregolent, M.; Masin, F.; Modolo, N.; Nardo, A.; Piva, F.; Rampazzo, F.; Sharma, C.; Trivellin, N.; Gao, Z.; Meneghini, M.; Zanoni, E.; Meneghesso, G.
Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs
2021 Gao, Z. H.; Meneghini, M.; Harrouche, K.; Kabouche, R.; Chiocchetta, F.; Okada, E.; Rampazzo, F.; De Santi, C.; Medjdoub, F.; Meneghesso, G.; Zanoni, E.
Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons
2020 Gao, Z.; Rampazzo, F.; Meneghini, M.; De Santi, C.; Chiocchetta, F.; Marcon, D.; Meneghesso, G.; Zanoni, E.
Geometric Modeling of Thermal Resistance in GaN HEMTs on Silicon
2020 Gonzalez, B.; De Santi, C.; Rampazzo, F.; Meneghini, M.; Nunez, A.; Zanoni, E.; Meneghesso, G.
On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion
2020 Rzin, M.; Meneghini, M.; Rampazzo, F.; Zhan, V. G.; Marcon, D.; Grunenputt, J.; Jung, H.; Lambert, B.; Riepe, K.; Blanck, H.; Graff, A.; Altmann, F.; Simon-Najasek, M.; Poppitz, D.; Meneghesso, G.; Zanoni, E.