The kink effect in field-effect transistors (FETs) consists in a sudden increase in drain current, I-D, during a drain voltage sweep and leading to a higher I-D saturation value. We report new experimental data concerning the dynamic behavior of the "kink" in AlGaN/GaN HEMTs and correlate them with deep levels. The results demonstrate the role of the Poole-Frenkel effect in determining the occurrence of the kink and identify the experimental conditions that make it observable.
Dynamic Behavior of Threshold Voltage and ID–VDS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect
Gao, Zhan;De Santi, Carlo;Rampazzo, Fabiana;Saro, Marco;Fornasier, Mirko;Meneghesso, Gaudenzio;Meneghini, Matteo;Zanoni, Enrico
2023
Abstract
The kink effect in field-effect transistors (FETs) consists in a sudden increase in drain current, I-D, during a drain voltage sweep and leading to a higher I-D saturation value. We report new experimental data concerning the dynamic behavior of the "kink" in AlGaN/GaN HEMTs and correlate them with deep levels. The results demonstrate the role of the Poole-Frenkel effect in determining the occurrence of the kink and identify the experimental conditions that make it observable.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
