CAVALIERE, ALBERTO
CAVALIERE, ALBERTO
Università di Padova
Deep-Level Effects in Back-Barrier-Scaled GaN HEMTs
2026 De Pieri, F.; Carlotto, A.; Fregolent, M.; Cavaliere, A.; Saro, M.; Rampazzo, F.; De Santi, C.; Zhan, V. G.; Meneghesso, G.; Meneghini, M.; Zanoni, E.
Reliability of GaN-HEMTs for Power Conversion on Alternative Substrates
2026 Cavaliere, Alberto
Current Collapse in Buffer-Free GaN-on-SiC Power Transistors: Maxwell-Wagner Effect and Related Model
2025 Cavaliere, Alberto; Modolo, Nicola; Santi, Carlo De; Koller, Christian; Ostermaier, Clemens; Meneghesso, Gaudenzio; Zanoni, Enrico; Öberg, Olof; Wang, Qin; Chen, Ding Yuan; Lundskog, Anders; Chen, Jr-Tai; Meneghini, Matteo
Ultra-fast recovery transients in GaN MIS-HEMT submitted to OFF-state stress
2025 Cavaliere, A.; Modolo, N.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs
2024 Cavaliere, A.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation
2023 Cavaliere, A.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps
2023 Favero, D; Cavaliere, A; De Santi, C; Borga, M; Goncalez, W; Geens, K; Bakeroot, B; Decoutere, S; Meneghesso, G; Zanoni, E; Meneghini, M