CAVALIERE, ALBERTO
CAVALIERE, ALBERTO
Università di Padova
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A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation
2023 Cavaliere, A.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps
2023 Favero, D; Cavaliere, A; De Santi, C; Borga, M; Goncalez, W; Geens, K; Bakeroot, B; Decoutere, S; Meneghesso, G; Zanoni, E; Meneghini, M
Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs
2024 Cavaliere, A.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
| Titolo | Data di pubblicazione | Autori | Rivista | Serie | Titolo libro |
|---|---|---|---|---|---|
| A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation | 2023 | Cavaliere, A.De Santi, C.Meneghesso, G.Zanoni, E.Meneghini, M. | MICROELECTRONICS RELIABILITY | - | - |
| High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps | 2023 | Favero, DCavaliere, ADe Santi, CBorga, MMeneghesso, GZanoni, EMeneghini, M + | - | IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | Proceedings of the 2023 IEEE International Reliability Physics Symposium (IRPS 2023) |
| Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs | 2024 | Cavaliere, A.De Santi, C.Meneghesso, G.Zanoni, E.Meneghini, M. | - | IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2024 PROCEEDINGS |