A Schottky gate p-GaN fin-channel field effect transistor on very low-doped p-GaN films

In this paper, we report a trigate fin-channel FET on very low-doped p-GaN films. While achieving a good source/drain ohmic contact mandates high p-GaN doping; a good Schottky gate interface, in contrast, demands low doping. We show that selective thermal diffusion of Mg is effective in enabling a good source/drain ohmic contact, whereas a low-doped p-GaN film enables good Schottky contact formation. The reported p-GaN FET showed an ON-resistance of similar to 43 k Omega.mm and an Ion/Ioff ratio of similar to 106.