MENEGHESSO, GAUDENZIO
 Distribuzione geografica
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Continente #
NA - Nord America 66.006
EU - Europa 9.639
AS - Asia 5.360
SA - Sud America 40
Continente sconosciuto - Info sul continente non disponibili 29
OC - Oceania 20
AF - Africa 11
Totale 81.105
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Nazione #
US - Stati Uniti d'America 65.158
CN - Cina 3.013
IT - Italia 2.215
DE - Germania 1.657
IE - Irlanda 1.567
FI - Finlandia 1.403
SG - Singapore 1.146
GB - Regno Unito 1.075
CA - Canada 836
UA - Ucraina 660
SE - Svezia 602
VN - Vietnam 449
IN - India 235
TW - Taiwan 131
JP - Giappone 122
KR - Corea 108
FR - Francia 107
NL - Olanda 71
HK - Hong Kong 66
BE - Belgio 48
RU - Federazione Russa 40
CH - Svizzera 34
GR - Grecia 34
AT - Austria 21
EU - Europa 21
BR - Brasile 20
RO - Romania 17
TR - Turchia 17
ES - Italia 14
AU - Australia 13
ID - Indonesia 13
PL - Polonia 13
EC - Ecuador 12
MX - Messico 10
BG - Bulgaria 9
IL - Israele 9
MY - Malesia 9
SA - Arabia Saudita 9
LT - Lituania 8
A2 - ???statistics.table.value.countryCode.A2??? 7
IR - Iran 7
NZ - Nuova Zelanda 7
BD - Bangladesh 6
DK - Danimarca 6
NO - Norvegia 6
AR - Argentina 5
MA - Marocco 5
MD - Moldavia 5
PT - Portogallo 5
RS - Serbia 5
CY - Cipro 4
DZ - Algeria 3
EE - Estonia 3
HR - Croazia 3
IQ - Iraq 3
NP - Nepal 3
CZ - Repubblica Ceca 2
KZ - Kazakistan 2
SI - Slovenia 2
TH - Thailandia 2
AF - Afghanistan, Repubblica islamica di 1
AP - ???statistics.table.value.countryCode.AP??? 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BY - Bielorussia 1
CL - Cile 1
CO - Colombia 1
DO - Repubblica Dominicana 1
EG - Egitto 1
HU - Ungheria 1
IM - Isola di Man 1
IS - Islanda 1
KE - Kenya 1
ME - Montenegro 1
MK - Macedonia 1
MO - Macao, regione amministrativa speciale della Cina 1
NG - Nigeria 1
OM - Oman 1
PA - Panama 1
PH - Filippine 1
PY - Paraguay 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 81.105
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Città #
Fairfield 10.284
Woodbridge 7.964
Houston 6.161
Ann Arbor 5.368
Ashburn 4.550
Seattle 3.863
Wilmington 3.532
Chandler 3.441
Cambridge 3.403
Jacksonville 2.901
Dublin 1.560
Princeton 1.274
Beijing 987
Medford 927
San Diego 900
Munich 809
Montréal 783
Des Moines 778
Padova 770
Mcallen 648
Singapore 634
Nanjing 591
Helsinki 563
Boardman 459
Dong Ket 443
Roxbury 356
Guangzhou 214
Leesburg 208
New York 186
Shenyang 170
Hebei 162
Nanchang 157
Norwalk 139
Jiaxing 129
London 124
Changsha 96
Tianjin 96
Washington 92
Indiana 82
Redwood City 80
Pune 76
Shanghai 70
Milan 61
Jinan 59
Los Angeles 54
Kharkiv 51
Tappahannock 43
Hsinchu 42
Borås 41
Zhengzhou 41
Scorzè 40
Ogden 38
Kilburn 36
Tokyo 35
Mumbai 33
Lappeenranta 31
Rome 30
Chicago 28
Central 25
Taipei 25
Turin 24
Frankfurt am Main 23
Hangzhou 23
Mestre 23
Palermo 22
Pignone 21
San Francisco 21
Chiswick 20
Ningbo 20
Rockville 20
Hounslow 19
Prescot 19
Arzignano 18
Falls Church 18
Phoenix 18
Berlin 17
Bologna 17
Brussels 17
Modena 17
Yellow Springs 16
Paris 15
Sarcedo 15
Thessaloniki 15
Yangmei District 15
Zurich 15
Amsterdam 14
Bengaluru 14
Edinburgh 14
Haikou 14
New Bedfont 14
Nürnberg 14
Stuttgart 14
Hefei 13
Parma 13
Treviso 13
Bristol 12
Delhi 12
Quito 12
Taichung 12
Venice 12
Totale 67.408
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Nome #
ESD Sensitivity of 65nm Fully Depleted SOI MOSFETs with Different Strain-Inducing Techniques 1.486
ESD Constraints of Bulk FinFET in Comparison with SOI FinFET Structures 1.368
Next Generation FinFET Devices in Bulk Silicon Technology and Their Benefits for ESD Robustness 1.015
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 719
An Insight into effects Induced by Heavy-Ion Strikes in SCR ESD Protection Structures 653
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs 511
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications 507
Three terminal Breakdown evaluation in GaN-HEMT 488
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 279
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs 234
Semi-Transparent Perovskite Solar Cells: Performance and Perspectives 219
Accelerated testing of RF-MEMS contact degradation through radiation sources 180
A Statistical Approach to Microdose Induced Degradation in FinFET Devices 174
False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs 170
A review of failure modes and mechanisms of GaN-based HEMT's 169
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface 168
A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs 165
Light Emission Measurements: A Promising Tool To Identify Hot Carrier Phenomena 157
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 156
Study and development of a fluorescence based sensor system for monitoring oxygen in wine production: The WOW project 154
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 154
Analysis of DC Current Accelerated Life Tests of GaN LEDs Using a Weibull-Based Statistical Model 153
Analysis of hot carrier aging degradation in GaN MESFETs 153
Accelerated life test of high brightness light emitting diodes 153
Failure modes and mechanisms of DC-aged GaN LEDs 152
Analysis of the role of current in the degradation of InGaN-based laser diodes 148
Experimental Investigation on the Exploitation of an Active Mechanism to Restore the Operability of Malfunctioning RF-MEMS Switches 148
Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes 148
Alternative MOS Devices for the Manufacture of High-Density ICs 148
2.1 A/mm current density AlGaN/GaN HEMT 148
Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs 147
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 147
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 147
Analysis of the physical processes responsible for the degradation of deep-ultraviolet light emitting diodes 146
Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors 146
Defect-related degradation of Deep-UV-LEDs 144
Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT's 143
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN light emitting diodes 143
Anomalous Kink Effect in GaN High Electron Mobility Transistors 143
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 143
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs 142
ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology 142
A study of Failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 142
Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements 141
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process 141
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 141
A novel fast and versatile temperature measurement system for LDMOS transistors 140
Failure modes and mechanisms of InP-based and Metamorphic High Electron Mobility Transistors 140
Influence of device self-heating on trap activation energy extraction 140
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 140
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 139
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging 138
ESD characterization of multi-chip RGB LEDs 138
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes 138
Guest Editorial Special Issue on GaN Electronic Devices 138
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes 138
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 138
A study on the reverse-bias and ESD instabilities of InGaN-based green LEDs 138
GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application 137
Reliability analysis of InGaN Blu-Ray laser diode 137
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 137
A new measurement set-up to investigate the charge trapping phenomena in RF MEMS packaged switches 135
Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes 134
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 134
Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting 133
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors 132
Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs 132
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction 131
Degradation of High-Brightness Green LEDs Submitted to Reverse Electrical Stress 131
Reliability aspects of GaN-HEMTs on composite substrates 130
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress 130
Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs 130
Adaptive multi-wavelength LED star simulator for space life studies 130
Development of kink in the output I-V characteristics of pseudomorphic HEMTs after hot-electron accelerated testing 128
Reliability issues of Gallium Nitride High Electron Mobility Transistors 128
Extensive analysis of the degradation of phosphor-converted LEDs 126
Channel temperature measurement of PHEMT by means of optical probes 126
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 126
"Hot-plugging" of LED modules: Electrical characterization and device degradation 126
Failure mechanisms of gallium nitride LEDs related with passivation 126
Low frequency noise characterization of the GaN LEDs 126
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 126
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs 125
Diagnosis of trapping phenomena in GaN MESFETs 125
A physical-based equivalent circuit model for an organic/electrolyte interface 125
Trap Characterization in Buried-Gate N-Channel 6H-SiC JFETs 125
Analysis of the Diffusion Involved in the Degradation of InGaN-Based Laser Diodes 124
A Review on the Reliability of GaN-based Laser Diodes 124
Characterization and Analysis of Trap-Related Effects in AlGaN-GaN HEMTs 123
Redistribution of multi-quantum well states induced by current stress in InxGa1-xN/GaN light-emitting diodes 122
Defects in GaN-based LEDs: Impact on internal quantum efficiency and on reliability 122
Understanding lead iodide perovskite hysteresis and degradation causes by extensive electrical characterization 121
Turn-On Speed Of Grounded Gate nMOS ESD protection Transistors 120
Extensive analysis of the degradation of blu-ray laser diodes 120
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test 120
Thermal storage effects on AlGaN/GaN HEMT 119
Low Current Dispersion and Low Bias-Stress Degradation of Unpassivated GaN/AlGaN/GaN/SiC HEMTs 119
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs 119
Demonstration of avalanche capability in polarization-doped vertical GaN pn diodes: Study of walkout due to residual carbon concentration 119
Towards high reliability GaN LEDs: Understanding the physical origin of gradual and catastrophic failure 119
Totale 19.762
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Categoria #
all - tutte 275.730
article - articoli 136.777
book - libri 146
conference - conferenze 0
curatela - curatele 132
other - altro 0
patent - brevetti 372
selected - selezionate 0
volume - volumi 5.250
Totale 418.407
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202016.271 0 514 275 3.554 1.797 1.290 1.369 1.891 2.032 1.820 1.031 698
2020/202111.003 641 807 500 812 503 791 747 1.401 1.435 951 1.251 1.164
2021/202212.205 381 1.813 1.726 740 382 541 628 1.243 524 319 1.342 2.566
2022/202310.081 1.900 358 178 867 1.718 1.461 273 847 1.306 124 675 374
2023/20246.785 532 916 726 550 470 889 496 285 238 321 642 720
2024/20252.837 2.719 118 0 0 0 0 0 0 0 0 0 0
Totale 81.846