MENEGHESSO, GAUDENZIO
 Distribuzione geografica
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Continente #
NA - Nord America 71.035
EU - Europa 10.858
AS - Asia 8.354
SA - Sud America 48
Continente sconosciuto - Info sul continente non disponibili 29
OC - Oceania 24
AF - Africa 12
Totale 90.360
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Nazione #
US - Stati Uniti d'America 70.156
CN - Cina 3.902
SG - Singapore 2.953
IT - Italia 2.696
DE - Germania 1.696
IE - Irlanda 1.573
FI - Finlandia 1.418
GB - Regno Unito 1.093
CA - Canada 858
UA - Ucraina 668
FR - Francia 648
SE - Svezia 606
VN - Vietnam 455
IN - India 336
KR - Corea 166
JP - Giappone 161
TW - Taiwan 150
HK - Hong Kong 116
NL - Olanda 99
RU - Federazione Russa 56
BE - Belgio 52
CH - Svizzera 49
GR - Grecia 37
AT - Austria 30
BR - Brasile 24
TR - Turchia 23
ES - Italia 22
EU - Europa 21
MX - Messico 18
AU - Australia 17
PL - Polonia 17
RO - Romania 17
EC - Ecuador 13
ID - Indonesia 13
MY - Malesia 13
SA - Arabia Saudita 12
IL - Israele 11
LT - Lituania 11
BG - Bulgaria 10
HU - Ungheria 10
IR - Iran 10
BD - Bangladesh 8
A2 - ???statistics.table.value.countryCode.A2??? 7
NO - Norvegia 7
NZ - Nuova Zelanda 7
AR - Argentina 6
DK - Danimarca 6
PT - Portogallo 6
CY - Cipro 5
MA - Marocco 5
MD - Moldavia 5
RS - Serbia 5
EE - Estonia 4
BY - Bielorussia 3
CL - Cile 3
DZ - Algeria 3
HR - Croazia 3
IQ - Iraq 3
NP - Nepal 3
CZ - Repubblica Ceca 2
KZ - Kazakistan 2
MO - Macao, regione amministrativa speciale della Cina 2
PA - Panama 2
SI - Slovenia 2
TH - Thailandia 2
AF - Afghanistan, Repubblica islamica di 1
AP - ???statistics.table.value.countryCode.AP??? 1
AZ - Azerbaigian 1
BH - Bahrain 1
BN - Brunei Darussalam 1
CO - Colombia 1
DO - Repubblica Dominicana 1
EG - Egitto 1
IM - Isola di Man 1
IS - Islanda 1
JO - Giordania 1
KE - Kenya 1
LK - Sri Lanka 1
LV - Lettonia 1
ME - Montenegro 1
MK - Macedonia 1
NG - Nigeria 1
OM - Oman 1
PH - Filippine 1
PY - Paraguay 1
SK - Slovacchia (Repubblica Slovacca) 1
SM - San Marino 1
ZA - Sudafrica 1
Totale 90.360
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Città #
Fairfield 10.284
Woodbridge 7.964
Houston 6.161
Ann Arbor 5.370
Ashburn 4.620
Seattle 3.866
Wilmington 3.532
Chandler 3.441
Cambridge 3.403
Jacksonville 2.901
Santa Clara 2.539
Singapore 2.321
Boardman 1.717
Dublin 1.564
Princeton 1.274
Beijing 994
Medford 927
Padova 927
San Diego 900
Munich 828
Montréal 783
Des Moines 778
Mcallen 648
Nanjing 592
Helsinki 574
Dong Ket 443
Roxbury 356
Guangzhou 237
Leesburg 208
New York 188
Shenyang 172
Riese Pio X 166
Hebei 162
Nanchang 157
Norwalk 139
Jiaxing 129
London 125
Changsha 104
Shanghai 100
Tianjin 96
Washington 96
Bengaluru 92
Indiana 82
Milan 81
Redwood City 80
Los Angeles 76
Pune 76
Jinan 60
Kharkiv 51
Hong Kong 47
Zhengzhou 47
Dallas 45
Hsinchu 44
Tappahannock 43
Borås 41
Tokyo 41
Rome 40
Scorzè 40
Ogden 38
Kilburn 36
Mumbai 34
Lappeenranta 31
Amsterdam 29
Chicago 28
Frankfurt am Main 28
Taipei 28
Hangzhou 27
Turin 26
Central 25
Mestre 25
San Francisco 24
Palermo 22
Pignone 21
Zurich 21
Bologna 20
Chiswick 20
Ningbo 20
Phoenix 20
Rockville 20
Brussels 19
Hounslow 19
Prescot 19
Arzignano 18
Berlin 18
Falls Church 18
Modena 17
New Delhi 17
Taichung 17
Parma 16
Yellow Springs 16
Hefei 15
Paris 15
Sarcedo 15
Stuttgart 15
São Paulo 15
Thessaloniki 15
Yangmei District 15
Yongin-si 15
Bristol 14
Cagliari 14
Totale 73.657
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Nome #
ESD Sensitivity of 65nm Fully Depleted SOI MOSFETs with Different Strain-Inducing Techniques 1.622
ESD Constraints of Bulk FinFET in Comparison with SOI FinFET Structures 1.375
Next Generation FinFET Devices in Bulk Silicon Technology and Their Benefits for ESD Robustness 1.022
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 726
An Insight into effects Induced by Heavy-Ion Strikes in SCR ESD Protection Structures 658
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs 518
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications 512
Three terminal Breakdown evaluation in GaN-HEMT 497
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 287
Semi-Transparent Perovskite Solar Cells: Performance and Perspectives 251
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs 249
Accelerated testing of RF-MEMS contact degradation through radiation sources 187
False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs 186
A Statistical Approach to Microdose Induced Degradation in FinFET Devices 180
A review of failure modes and mechanisms of GaN-based HEMT's 176
A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs 174
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface 174
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 166
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 164
Study and development of a fluorescence based sensor system for monitoring oxygen in wine production: The WOW project 163
Light Emission Measurements: A Promising Tool To Identify Hot Carrier Phenomena 159
Failure modes and mechanisms of DC-aged GaN LEDs 159
Analysis of DC Current Accelerated Life Tests of GaN LEDs Using a Weibull-Based Statistical Model 159
Accelerated life test of high brightness light emitting diodes 159
Analysis of hot carrier aging degradation in GaN MESFETs 158
2.1 A/mm current density AlGaN/GaN HEMT 158
Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors 157
Analysis of the role of current in the degradation of InGaN-based laser diodes 156
Alternative MOS Devices for the Manufacture of High-Density ICs 156
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 155
Experimental Investigation on the Exploitation of an Active Mechanism to Restore the Operability of Malfunctioning RF-MEMS Switches 152
Analysis of the physical processes responsible for the degradation of deep-ultraviolet light emitting diodes 152
Anomalous Kink Effect in GaN High Electron Mobility Transistors 152
Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs 151
Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes 150
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs 150
Defect-related degradation of Deep-UV-LEDs 150
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes 149
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 149
A study of Failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 149
Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting 148
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 148
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process 148
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 148
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 147
A study on the reverse-bias and ESD instabilities of InGaN-based green LEDs 147
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging 146
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 146
A novel fast and versatile temperature measurement system for LDMOS transistors 145
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN light emitting diodes 145
ESD characterization of multi-chip RGB LEDs 145
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 145
ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology 145
Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT's 144
Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements 144
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes 144
Failure modes and mechanisms of InP-based and Metamorphic High Electron Mobility Transistors 143
Influence of device self-heating on trap activation energy extraction 143
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 143
Guest Editorial Special Issue on GaN Electronic Devices 142
GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application 141
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 140
A new measurement set-up to investigate the charge trapping phenomena in RF MEMS packaged switches 140
Adaptive multi-wavelength LED star simulator for space life studies 140
Reliability analysis of InGaN Blu-Ray laser diode 139
A film-forming graphene/diketopyrrolopyrrole covalent hybrid with far-red optical features: Evidence of photo-stability 139
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 138
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors 137
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress 137
Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes 136
Reliability aspects of GaN-HEMTs on composite substrates 135
Reliability issues of Gallium Nitride High Electron Mobility Transistors 135
Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs 135
Analysis of the Diffusion Involved in the Degradation of InGaN-Based Laser Diodes 135
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 135
Extensive analysis of the degradation of phosphor-converted LEDs 134
Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs 134
"Hot-plugging" of LED modules: Electrical characterization and device degradation 134
Failure mechanisms of gallium nitride LEDs related with passivation 134
A physical-based equivalent circuit model for an organic/electrolyte interface 133
Understanding lead iodide perovskite hysteresis and degradation causes by extensive electrical characterization 133
Degradation of High-Brightness Green LEDs Submitted to Reverse Electrical Stress 133
Diagnosis of trapping phenomena in GaN MESFETs 132
Defects in GaN-based LEDs: Impact on internal quantum efficiency and on reliability 132
Trap Characterization in Buried-Gate N-Channel 6H-SiC JFETs 132
A Review on the Reliability of GaN-based Laser Diodes 132
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction 132
Development of kink in the output I-V characteristics of pseudomorphic HEMTs after hot-electron accelerated testing 131
Characterization and Analysis of Trap-Related Effects in AlGaN-GaN HEMTs 131
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs 131
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes 129
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 129
Low frequency noise characterization of the GaN LEDs 129
Channel temperature measurement of PHEMT by means of optical probes 128
Thermal storage effects on AlGaN/GaN HEMT 127
Analysis of the mechanisms limiting the reliability of retrofit LED lamps 127
Positive and negative threshold voltage instabilities in GaN-based transistors 126
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs 126
Evidence of Spiro-OMeTAD De-doping by tert-Butylpyridine Additive in Hole-Transporting Layers for Perovskite Solar Cells 126
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test 126
Totale 20.596
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Categoria #
all - tutte 320.054
article - articoli 156.149
book - libri 170
conference - conferenze 0
curatela - curatele 167
other - altro 0
patent - brevetti 443
selected - selezionate 0
volume - volumi 5.932
Totale 482.915
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202010.131 0 0 0 0 0 1.290 1.369 1.891 2.032 1.820 1.031 698
2020/202111.003 641 807 500 812 503 791 747 1.401 1.435 951 1.251 1.164
2021/202212.205 381 1.813 1.726 740 382 541 628 1.243 524 319 1.342 2.566
2022/202310.091 1.900 358 178 867 1.718 1.461 273 847 1.308 130 677 374
2023/20246.795 532 919 726 550 474 889 498 285 238 321 642 721
2024/202512.134 2.719 1.795 1.150 1.347 3.699 1.424 0 0 0 0 0 0
Totale 91.163