This work aims to propose a novel method to accelerate the lifetime of ohmic RF-MEMS switches by means of radiation exposure. Experimental results of proton and γ-ray irradiation were compared to cycling stresses, obtaining similar degradation in electrical performances. Electrical measurements, RF simulations, and AFM analysis of surface roughness were carried out to verify the proposed method.
Accelerated testing of RF-MEMS contact degradation through radiation sources
TAZZOLI, AUGUSTO;BARBATO, MARCO;GILIBERTO, VALENTINA;GERARDIN, SIMONE;NICOLOSI, PIERGIORGIO;PACCAGNELLA, ALESSANDRO;MENEGHESSO, GAUDENZIO
2010
Abstract
This work aims to propose a novel method to accelerate the lifetime of ohmic RF-MEMS switches by means of radiation exposure. Experimental results of proton and γ-ray irradiation were compared to cycling stresses, obtaining similar degradation in electrical performances. Electrical measurements, RF simulations, and AFM analysis of surface roughness were carried out to verify the proposed method.
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