This work presents the results of an extensive DC current aging and failure analysis carried out on blue InGaN/GaN LEDs which identify failure mechanisms related to package degradation, changes in effective doping profile, and generation of deep levels. DLTS and photocurrent spectra indicate the creation of extended defects in devices aged at very high current density.
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging
MENEGHESSO, GAUDENZIO;LEVADA, SIMONE;PIEROBON, ROBERTO;RAMPAZZO, FABIANA;ZANONI, ENRICO;
2002
Abstract
This work presents the results of an extensive DC current aging and failure analysis carried out on blue InGaN/GaN LEDs which identify failure mechanisms related to package degradation, changes in effective doping profile, and generation of deep levels. DLTS and photocurrent spectra indicate the creation of extended defects in devices aged at very high current density.
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