We show how light emission in modern submicrometric semiconductor devices can be used to extract much information about microscopic mechanisms (high energy carrier related phenomena: impact ionization, real space transfer, radiative energy loss mechanisms) and how they depend on device bias voltages and temperature. From emitted light analysis we obtained a clear evidence of impact ionization in the studied devices, a satisfactory evaluation of the effective temperature of carriers, a measurement of energy band gap of the channel semiconductor material.
Light Emission Measurements: A Promising Tool To Identify Hot Carrier Phenomena
MENEGHESSO, GAUDENZIO;
1997
Abstract
We show how light emission in modern submicrometric semiconductor devices can be used to extract much information about microscopic mechanisms (high energy carrier related phenomena: impact ionization, real space transfer, radiative energy loss mechanisms) and how they depend on device bias voltages and temperature. From emitted light analysis we obtained a clear evidence of impact ionization in the studied devices, a satisfactory evaluation of the effective temperature of carriers, a measurement of energy band gap of the channel semiconductor material.
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