Rf current collapse is investigated in AlGaN/GaN HEMT's by means of pulsed, transient, and small-signal measurements. Numerical device simulations are presented, showing that the concomitant presence, at the ungated device surface, of polarization-induced charges and hole traps can explain, without invoking any other hypothesis, all dispersion effects observed experimentally.
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's
PIEROBON, ROBERTO;RAMPAZZO, FABIANA;MENEGHESSO, GAUDENZIO;CHINI, ALESSANDRO;BUTTARI, DARIO;ZANONI, ENRICO
2002
Abstract
Rf current collapse is investigated in AlGaN/GaN HEMT's by means of pulsed, transient, and small-signal measurements. Numerical device simulations are presented, showing that the concomitant presence, at the ungated device surface, of polarization-induced charges and hole traps can explain, without invoking any other hypothesis, all dispersion effects observed experimentally.
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