Three terminal Breakdown evaluation in GaN-HEMT

AlGaN/GaN High Electron Mobility Transistors (HEMTs) are becoming optimum candidates for the fabrication of new high-power and high-frequency devices demanded by future wired and wireless communication applications [1]. In this work we have carried out a complete electrical characterization in DC and pulsed regime of traditional and T-Gate GaN HEMTs, extending the device bias up to the breakdown value. Devices were characterized by a Width (W) from 80 um to 1.2 mm, and a LG of 0.5 um. Tested HEMTs were grown over SiC, Sapphire, SiCopSiC (mono-crystalline SiC on poly-crystalline SiC), and SopSiC (mono-crystalline Si on poly-crystalline SiC)