This paper reports the first ESD results on NMOS and gated diode devices processed in a bulk FinFET technology. A comparison with SOI FinFET performance is carried out, highlighting the role of device geometry and three-dimensional architecture. Moreover, the ESD-RF performance of bulk FinFET gated diodes is evaluated and compared to SOI.

Next Generation FinFET Devices in Bulk Silicon Technology and Their Benefits for ESD Robustness

GRIFFONI, ALESSIO;MENEGHESSO, GAUDENZIO;
2009

Abstract

This paper reports the first ESD results on NMOS and gated diode devices processed in a bulk FinFET technology. A comparison with SOI FinFET performance is carried out, highlighting the role of device geometry and three-dimensional architecture. Moreover, the ESD-RF performance of bulk FinFET gated diodes is evaluated and compared to SOI.
2009
EOS/ESD 2009, 31th Electrical Overstress / Electrostatic Discharge Symposium
9781585371761
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2373370
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