Therefore the aim of this paper is to describe a detailed investigation on the reverse-bias degradation of GaN-based LEDs. The results described in this paper indicate that: (i) under reverse bias, LEDs can show a weak luminescence signal, due to the recombination of carriers injected in the quantum-wells; (ii) reverse-bias stress can induce the degradation of the electrical characteristics of the LEDs (increase in reverse-current, decrease in breakdown voltage), due to the generation of point defects in proximity of pre-existing defective regions. (iii) Furthermore, our tests indicate that the defective regions responsible for reverse-current conduction can constitute weak points with respect to ESD events: ESD failures are determined by the shortening of the junction in proximity of one of the defective sites responsible for reverse-current conduction.

A study on the reverse-bias and ESD instabilities of InGaN-based green LEDs

MENEGHINI, MATTEO;TAZZOLI, AUGUSTO;TRIVELLIN, NICOLA;DAL LAGO, MATTEO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2010

Abstract

Therefore the aim of this paper is to describe a detailed investigation on the reverse-bias degradation of GaN-based LEDs. The results described in this paper indicate that: (i) under reverse bias, LEDs can show a weak luminescence signal, due to the recombination of carriers injected in the quantum-wells; (ii) reverse-bias stress can induce the degradation of the electrical characteristics of the LEDs (increase in reverse-current, decrease in breakdown voltage), due to the generation of point defects in proximity of pre-existing defective regions. (iii) Furthermore, our tests indicate that the defective regions responsible for reverse-current conduction can constitute weak points with respect to ESD events: ESD failures are determined by the shortening of the junction in proximity of one of the defective sites responsible for reverse-current conduction.
2010
Proc. SPIE Vol. 7617, 76170M
XIV conference on “Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting”, SPIE Photonics West
9780819480132
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2446921
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