Large decreases in the drain current in the linear and low Vds region followed by a "kink" in the output Ia-Vds characteristics have been found after hot electron stress test in AIGaAs/InGaAs/GaAs power pseudomorphic HEMT's. Decrease in the transconductance measured in linear region, increase in the drain parasitic resistance and trasconductance frequency dispersion have also been observed and attributed to the generation of electron traps in the gate-to-drain access region.
Development of kink in the output I-V characteristics of pseudomorphic HEMTs after hot-electron accelerated testing
MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
1997
Abstract
Large decreases in the drain current in the linear and low Vds region followed by a "kink" in the output Ia-Vds characteristics have been found after hot electron stress test in AIGaAs/InGaAs/GaAs power pseudomorphic HEMT's. Decrease in the transconductance measured in linear region, increase in the drain parasitic resistance and trasconductance frequency dispersion have also been observed and attributed to the generation of electron traps in the gate-to-drain access region.
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