We study the variability of microdose effects induced by heavy-ion strikes on FinFETs. We model the effects through a statistical analysis, which considers the three-dimensional nature of these devices and overlapping ion hits. The analysis carried out in this work is based on a large amount of experimental data and on the reliability distribution functions (Poisson area scaling, Log- Normal distribution,Weibull distribution, etc.), commonly used to estimate the time and charge to breakdown for accelerated lifetime tests.
A Statistical Approach to Microdose Induced Degradation in FinFET Devices
GRIFFONI, ALESSIO;GERARDIN, SIMONE;MENEGHESSO, GAUDENZIO;PACCAGNELLA, ALESSANDRO;
2009
Abstract
We study the variability of microdose effects induced by heavy-ion strikes on FinFETs. We model the effects through a statistical analysis, which considers the three-dimensional nature of these devices and overlapping ion hits. The analysis carried out in this work is based on a large amount of experimental data and on the reliability distribution functions (Poisson area scaling, Log- Normal distribution,Weibull distribution, etc.), commonly used to estimate the time and charge to breakdown for accelerated lifetime tests.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
