For the first time, the heavy-ions induced degradation and Single Event Latchup (SEL) are studied in SCR ESD protection structures for space applications. The device degradation strongly depends on the doping profile. A high SEL sensitivity is observed when the devices are used to protect high-voltage (HV) I/O pins.
An Insight into effects Induced by Heavy-Ion Strikes in SCR ESD Protection Structures
GRIFFONI, ALESSIO;TAZZOLI, AUGUSTO;PACCAGNELLA, ALESSANDRO;MENEGHESSO, GAUDENZIO;
2011
Abstract
For the first time, the heavy-ions induced degradation and Single Event Latchup (SEL) are studied in SCR ESD protection structures for space applications. The device degradation strongly depends on the doping profile. A high SEL sensitivity is observed when the devices are used to protect high-voltage (HV) I/O pins.File in questo prodotto:
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