At the present the GaN light emitting diodes (LEDs) are substituting more and more the conventional light sources in the daily life. LEDs based on the GaN offer the ultra brightness (from visible blue up to UV region) that is combined with high electrical efficiency [1]. The growing market of GaN LEDs requires higher reliability and longer lifetime of these devices. Therefore the importance of the investigations on failure mechanisms and ruggedness is growing. The failure modes and mechanisms are intensively investigated now by the different methods: thermal and electrical aging, stressing by the ESD pulses [2, 3]. In the present work the device analysis is performed by the low frequency noise (LFN) measurements. The LFN characterization is shown to be a powerful noninvasive tool to investigate the quality of devices [4] and to track the changes in the structures with aging [5]
Low frequency noise characterization of the GaN LEDs
MENEGHESSO, GAUDENZIO;
2004
Abstract
At the present the GaN light emitting diodes (LEDs) are substituting more and more the conventional light sources in the daily life. LEDs based on the GaN offer the ultra brightness (from visible blue up to UV region) that is combined with high electrical efficiency [1]. The growing market of GaN LEDs requires higher reliability and longer lifetime of these devices. Therefore the importance of the investigations on failure mechanisms and ruggedness is growing. The failure modes and mechanisms are intensively investigated now by the different methods: thermal and electrical aging, stressing by the ESD pulses [2, 3]. In the present work the device analysis is performed by the low frequency noise (LFN) measurements. The LFN characterization is shown to be a powerful noninvasive tool to investigate the quality of devices [4] and to track the changes in the structures with aging [5]
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