After the results of a previous work [1], intermediate robustness of GaN/InGaN-on sapphire blue LEDs vs. ESD stress is investigated. Different from other cases, no evidence for defect-related weakness is available. The role of resistive current paths in focusing the flow of charge and the voltage peaks under both dc and transient conditions is then considered, by means of simple considerations on a distributed network of elementary diodes and resistors representing the main electrical features of the LED structure. EL and EBIC maps on both regular and failed devices support the proposed interpretation
Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs
MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2001
Abstract
After the results of a previous work [1], intermediate robustness of GaN/InGaN-on sapphire blue LEDs vs. ESD stress is investigated. Different from other cases, no evidence for defect-related weakness is available. The role of resistive current paths in focusing the flow of charge and the voltage peaks under both dc and transient conditions is then considered, by means of simple considerations on a distributed network of elementary diodes and resistors representing the main electrical features of the LED structure. EL and EBIC maps on both regular and failed devices support the proposed interpretation
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