This paper shows electrical characterizations and reliability analysis performed on AlGaN/GaN HEMTs processed on epitaxy grown on composite substrates. The results are very promising for the fabrication of low cost high power microwave transistors for wireless communication systems. The composite substrates constitute a valuable alternative to the silicon since better thermal properties are expected.
Reliability aspects of GaN-HEMTs on composite substrates
ZANON, FRANCO;DANESIN, FRANCESCA;TAZZOLI, AUGUSTO;MENEGHINI, MATTEO;RONCHI, NICOLO';ZANONI, ENRICO;MENEGHESSO, GAUDENZIO
2008
Abstract
This paper shows electrical characterizations and reliability analysis performed on AlGaN/GaN HEMTs processed on epitaxy grown on composite substrates. The results are very promising for the fabrication of low cost high power microwave transistors for wireless communication systems. The composite substrates constitute a valuable alternative to the silicon since better thermal properties are expected.
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