In this work, for the first time, the dependence of the GaN HEMTs current collapse from the profile of the Fe-doped semi-insulating GaN buffers has been demonstrated both experimentally and by means of numerical simulations based on the SIMS measured profile of the GaN buffer Fe-doping concentration.

Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs

BISI, DAVIDE;STOCCO, ANTONIO;MENEGHINI, MATTEO;GASPAROTTO, ANDREA;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2012

Abstract

In this work, for the first time, the dependence of the GaN HEMTs current collapse from the profile of the Fe-doped semi-insulating GaN buffers has been demonstrated both experimentally and by means of numerical simulations based on the SIMS measured profile of the GaN buffer Fe-doping concentration.
2012
IEEE IRPS2012, International Reliability Physics Symposium
IEEE IRPS2012, International Reliability Physics Symposium
9781457716782
9781457716799
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2521040
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