In this work, for the first time, the dependence of the GaN HEMTs current collapse from the profile of the Fe-doped semi-insulating GaN buffers has been demonstrated both experimentally and by means of numerical simulations based on the SIMS measured profile of the GaN buffer Fe-doping concentration.
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs
BISI, DAVIDE;STOCCO, ANTONIO;MENEGHINI, MATTEO;GASPAROTTO, ANDREA;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2012
Abstract
In this work, for the first time, the dependence of the GaN HEMTs current collapse from the profile of the Fe-doped semi-insulating GaN buffers has been demonstrated both experimentally and by means of numerical simulations based on the SIMS measured profile of the GaN buffer Fe-doping concentration.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
