ZANONI, ENRICO

ZANONI, ENRICO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Physical Modelling of Charge Trapping Effects 2024 Buffolo, MatteoDe Santi, CarloMeneghesso, GaudenzioMeneghini, MatteoZanoni, EnricoChini, Alessandro + - - Modeling of AlGaN/GaN High Electron Mobility Transistors
GaN-Based Lateral and Vertical Devices 2023 Meneghini M.De Santi C.Zanoni E.Meneghesso G. + - - Springer Handbook of Semiconductor Devices
Introduzione 2023 M. AgostiE. Zanoni - - Storia e Storie del DEI. Trentacinque anni del Dipartimento di Ingegneria dell’Informazione dell’Università di Padova
Degradation mechanisms of InGaN visible LEDs and AlGaN UV LEDs 2021 De Santi C.Caria A.Piva F.Meneghesso G.Zanoni E.Meneghini M. - - Reliability of Semiconductor Lasers and Optoelectronic Devices
Reliability of Ultraviolet Light-Emitting Diodes 2019 C. De SantiD. MontiDalapati, PradipM. MeneghiniG. MeneghessoE. Zanoni - - Solid State Lighting Technology and Application Series
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 2018 C. De SantiM. MeneghiniG. MeneghessoE. Zanoni + - - Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications
Reliability of GaN-Based Power Devices 2018 G. MeneghessoE. ZanoniM. MeneghiniM. RuzzarinI. Rossetto - - Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
Chip-Level Degradation of InGaN-Based Optoelectronic Devices 2017 C. De SantiM. MeneghiniG. MeneghessoE. Zanoni - - Solid State Lighting Reliability Part 2: Components to Systems
Electrical properties, reliability issues, and ESD robustness of InGaN-based LEDs 2017 Meneghini, M.Meneghesso, G.Zanoni, E. - - Topics in Applied Physics - III-Nitride Based Light Emitting Diodes and Applications
Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities 2016 I. RossettoD. BisiC. De SantiA. StoccoG. MeneghessoE. ZanoniM. Meneghini - - Power GaN Devices: Materials, Applications and Reliability
ESD Sensitivity of GaN-Based Electronic Devices 2015 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOZANONI, ENRICO - - Electrostatic Discharge Protection Advances and Applications
Trapping and Degradation Mechanisms in GaN-Based HEMTs 2015 MENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO - - Gallium Nitride (GaN): Physics, Devices, and Technology
"Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs" in III-Nitride Based Light Emitting Diodes and Applications 2013 MENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO - - Topics in Applied Physics III-Nitride Based Light Emitting Diodes and Applications
Recent results on the physical origin of the degradation of GaN-based LEDs and lasers 2011 MENEGHINI, MATTEOTRIVELLIN, NICOLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - SPIE Proceedings Vol. 7939, Gallium Nitride Materials and Devices
Current collapse associated with surface states in GaN based HEMT's. Theoretical / experimental investigations 2004 MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Simulation of Semiconductor Processes and Devices 2004
Elettroni e cristalli 2003 ZANONI, ENRICO - - Cristalli e gemme. Realta' fisica e immaginario. Simbologia, tecniche ed arte. Atti del Convegno di studio promosso dall'Istituto Veneto di Scienze, Lettere ed Arti, Venezia 28, 29 e 30 aprile 1999
Impact Ionization in Compound Semiconductor Devices 2001 ZANONI, ENRICOMENEGHESSO, GAUDENZIO - - Handbook of Advanced Electronic and Photonic Materials and Devices
Elimination of the kink effects in InAlAs/InGaAs InP-based HEMT’s by means of InP etch-stop layer 1999 MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Inst. Phys. Conf. Ser. No. 162 Chap.1
Reliability Issue in Compound Semiconductor Heterojunction Devices 1999 MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Inst. Phys. Conf. Ser. No. 162 Chapter 1
Elimination of the kink effects in InAlAs/InGaAs InP-based HEMT's by means of InP etch-stop layer 1998 MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Inst. Phys. Conf. Ser. No. 162 Chapter 1, pp. 21-30, 1999. Presented t 25th International Symposium on Compound Semiconductor, ISCS’98