STOCCO, ANTONIO

STOCCO, ANTONIO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 71 (tempo di esecuzione: 0.042 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 2016 DE SANTI, CARLODALCANALE, STEFANOSTOCCO, ANTONIORAMPAZZO, FABIANAGERARDIN, SIMONEMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - proc. of the 8th Wide Bandgap Semiconductors and Components Workshop
Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities 2016 I. RossettoD. BisiC. De SantiA. StoccoG. MeneghessoE. ZanoniM. Meneghini - - Power GaN Devices: Materials, Applications and Reliability
Reliability of Gallium Nitride microwave transistors: A framework for the evaluation of failure mechanisms and instabilities, from accelerated testing to failure analysis and process improvement 2016 ZANONI, ENRICOMENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIODALCANALE, STEFANORAMPAZZO, FABIANADE SANTI, CARLOROSSETTO, ISABELLA - - Proc. of the 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 2015 Bisi, DStocco, A.Rossetto, I.Meneghini, M.Rampazzo, Fabiana.Chini, A.De Salvador, D.Bazzan, M.Meneghesso, G.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors during RF Operation: Correlation with GaN Buffer Design 2015 BISI, DAVIDESTOCCO, ANTONIOMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Novel high-voltage double-pulsed system for GaN-based power HEMTs 2015 STOCCO, ANTONIOBISI, DAVIDEBARBATO, ALESSANDROMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO - - Proc. GE 2015 Annual Meeting
Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena 2015 ZANONI, ENRICOMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOBISI, DAVIDEROSSETTO, ISABELLASTOCCO, ANTONIO - - WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications
Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs 2015 MENEGHINI, MATTEOBISI, DAVIDEROSSETTO, ISABELLADE SANTI, CARLOSTOCCO, ANTONIORAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICO + PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING - Proceedings of SPIE - The International Society for Optical Engineering
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements 2014 MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDESTOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Characterization of High-Voltage Charge-Trapping Effects in GaN-based Power HEMTs 2014 BISI, DAVIDESTOCCO, ANTONIOMENEGHINI, MATTEORAMPAZZO, FABIANACESTER, ANDREAMENEGHESSO, GAUDENZIOZANONI, ENRICO - - Solid State Device Research Conference (ESSDERC), 2014 44th European
Double Control Gate Field-Effect Transistor for Area Efficient and Cost Effective Applications 2014 MARINO, FABIO ALESSIOSTOCCO, ANTONIOBARBATO, MARCOZANONI, ENRICOMENEGHESSO, GAUDENZIO IEEE ELECTRON DEVICE LETTERS - -
Failure signatures on 0.25 mu m GaN HEMTs for high-power RF applications 2014 STOCCO, ANTONIODALCANALE, STEFANORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
High-Voltage Double-Pulsed Measurement System for GaN-based Power HEMTs 2014 BISI, DAVIDESTOCCO, ANTONIOMENEGHINI, MATTEORAMPAZZO, FABIANACESTER, ANDREAMENEGHESSO, GAUDENZIOZANONI, ENRICO - - 52nd IEEE International Reliability Physics Symposium, IRPS 2014
Parasitic effects of buffer design on static and dynamic parameters of AlGaN/GaN High Electron Mobility Transistors 2014 BISI, DAVIDESTOCCO, ANTONIOROSSETTO, ISABELLAMENEGHINI, MATTEORAMPAZZO, FABIANACHINI, ALESSANDRODE SALVADOR, DAVIDEBAZZAN, MARCOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - proc. of 7th ESA-MOD Workshop on Wideband Gap semiconductors and Components
Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors 2014 ZANONI, ENRICOMENEGHESSO, GAUDENZIOMENEGHINI, MATTEOBISI, DAVIDEDE SANTI, CARLORAMPAZZO, FABIANAROSSETTO, ISABELLASTOCCO, ANTONIO + - - Proc. of 2014 International Conference on Solid State Devices and Materials SSDM-2014
Proton induced trapping effect on space compatible GaN HEMTs 2014 STOCCO, ANTONIOGERARDIN, SIMONEBISI, DAVIDEDALCANALE, STEFANORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Reliability improvement of AlGaN/GaN HEMTs for space applications 2014 DALCANALE, STEFANOSTOCCO, ANTONIORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO - - Proc. of 38th Workshop on Compound Semiconductor Devices and Integrated Circuits
Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs 2014 MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDESTOCCO, ANTONIOCESTER, ANDREAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 52nd IEEE International Reliability Physics Symposium
Simple technique for failure modes detection on high-performances space designed GaN HEMTs 2014 STOCCO, ANTONIODALCANALE, STEFANORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - proc. of 7th ESA-MOD Workshop on Wideband Gap semiconductors and Components
Deep Levels Characterization by Means of Drain Current Transient in AlGaN/GaN HEMT Devices 2013 BISI, DAVIDESTOCCO, ANTONIORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2013)