CHINI, ALESSANDRO

CHINI, ALESSANDRO  

Mostra records
Risultati 1 - 20 di 33 (tempo di esecuzione: 0.04 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Physical Modelling of Charge Trapping Effects 2024 Buffolo, MatteoDe Santi, CarloMeneghesso, GaudenzioMeneghini, MatteoZanoni, EnricoChini, Alessandro + - - Modeling of AlGaN/GaN High Electron Mobility Transistors
GaN-based power devices: Physics, reliability, and perspectives 2021 Meneghini M.De Santi C.Buffolo M.Chini A.Medjdoub F.Meneghesso G.Verzellesi G.Zanoni E. + JOURNAL OF APPLIED PHYSICS - -
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs 2018 RZIN, MEHDIChini, A.De Santi, C.Meneghini, M.Meneghesso, G.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
A novel test methodology for RON and VTH monitoring in GaN HEMTs during switch-mode operation 2017 Meneghesso G.Verzellesi G.Chini A. + - - International Reliability Physics Symposium
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices 2017 Enrico ZanoniAlessandro BarbatoDavide BisiCarlo De SantiIsabella RossettoMaria RuzzarinNicola TrivellinAlessandro ChiniGaudenzio MeneghessoMatteo Meneghini - - Proceedings of the 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2017)
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 2015 Bisi, DStocco, A.Rossetto, I.Meneghini, M.Rampazzo, Fabiana.Chini, A.De Salvador, D.Bazzan, M.Meneghesso, G.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Parasitic effects of buffer design on static and dynamic parameters of AlGaN/GaN High Electron Mobility Transistors 2014 BISI, DAVIDESTOCCO, ANTONIOROSSETTO, ISABELLAMENEGHINI, MATTEORAMPAZZO, FABIANACHINI, ALESSANDRODE SALVADOR, DAVIDEBAZZAN, MARCOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - proc. of 7th ESA-MOD Workshop on Wideband Gap semiconductors and Components
Effects of Thermal Annealing on Current Degradation in Enhancement Mode Pd gate InAlAs/InGaAs/InP pHEMTs 2011 BISI, DAVIDECHINI, ALESSANDRO + - - 20th European Heterostructure Technology meeting
Reliability aspects of GaN microwave devices 2004 MENEGHESSO, GAUDENZIOPIEROBON, ROBERTORAMPAZZO, FABIANACHINI, ALESSANDROZANONI, ENRICO + - - -
2.1 A/mm current density AlGaN/GaN HEMT 2003 CHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICOBUTTARI, DARIO + ELECTRONICS LETTERS - -
Instabilities and degradation in GaN-based devices 2003 MENEGHESSO, GAUDENZIOPIEROBON, ROBERTORAMPAZZO, FABIANACHINI, ALESSANDROZANONI, ENRICO + - - -
Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs 2003 MENEGHESSO, GAUDENZIOCHINI, ALESSANDROZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Reliability aspects of GaN microwave devices 2003 MENEGHESSO, GAUDENZIOPIEROBON, ROBERTORAMPAZZO, FABIANACHINI, ALESSANDROZANONI, ENRICO + - - -
Characterization of GaN-based metal-semiconductor field-effect transistors by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy 2002 CHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + JOURNAL OF APPLIED PHYSICS - -
Deep-Level Characterization in 6H-SiC JFETs by Means of Two-Dimensional Device Simulations 2002 MENEGHESSO, GAUDENZIOCHINI, ALESSANDROZANONI, ENRICO + - - -
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 2002 PIEROBON, ROBERTORAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOCHINI, ALESSANDROBUTTARI, DARIOZANONI, ENRICO + - - -
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 2002 BUTTARI, DARIOCHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Systematic characterization of Cl<sub>2</sub> reactive ion etching for gate recessing in AlGaN/GaN HEMTs 2002 BUTTARI, DARIOCHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Characterization of GaN based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence spectroscopy 2001 CHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Current Collapse in AlGaN/GaN HEMTs 2001 CHINI, ALESSANDROBUTTARI, DARIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -