GERARDIN, SIMONE
GERARDIN, SIMONE
Dipartimento di Ingegneria dell'Informazione - DEI
Displacement Damage and Total Ionizing Dose induced by 3-MeV Protons in SiC Vertical Power MOSFETs
2024 Martinella, C.; Bonaldo, S.; Bagatin, M.; Gerardin, S.; Fur, N.; Gassenmeier, V.; Goncalves De Medeiros, H.; Paccagnella, A.; Grossner, U.
Impact of Tier Pitch Scaling on Heavy-Ion Sensitivity of 3-D NAND Flash Memories
2024 Bagatin, M.; Gerardin, S.; Paccagnella, A.; Benvenuti, A.; Beltrami, S.
Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs
2024 Bonaldo, S.; Wallace, T.; Barnaby, H.; Borghello, G.; Termo, G.; Faccio, F.; Fleetwood, D. M.; Mattiazzo, S.; Bagatin, M.; Paccagnella, A.; Gerardin, S.
Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses
2024 Bonaldo, S.; Martinella, C.; Race, S.; Fur, N.; Mattiazzo, S.; Bagatin, M.; Gerardin, S.; Paccagnella, A.; Grossner, U.
RD53 pixel chips for the ATLAS and CMS Phase-2 upgrades at HL-LHC
2024 Loddo, F.; Andreazza, A.; Arteche, F.; Barbero, M. B.; Barillon, P.; Beccherle, R.; Bilei, G. M.; Bjalas, W.; Bonaldo, S.; Bortoletto, D.; Calderini, G.; Caratelli, A.; Christian, D. C.; Christiansen, J.; Conti, E.; Crescioli, F.; Daas, M.; De Robertis, G.; Demaria, N.; Deptuch, G. C.; Dieter, Y.; Dimitrievska, A.; Ding, L.; Esposito, S.; Exarchou, D.; Fahim, F.; Fioriti, A.; Fougeron, D.; Gaioni, L.; Garcia-Sciveres, M.; Gerardin, S.; Gnani, D.; Grippo, M.; Gromov, V.; Hamer, M.; Havranek, M.; Heim, T.; Hemperek, T.; Hinterkeuser, F.; Hoff, J.; Huiberts, S.; Janssen, J.; Jara Casas, L. M.; Jirsa, J.; John, J. J.; Kampkotter, J.; Karagounis, M.; Khwaira, Y.; Kluit, R.; Krieger, A.; Krueger, H.; Lalic, J.; Lauritzen, M.; Licciulli, F.; Lipton, R.; Liu, T.; Lopez Morillo, E.; Lounis, A.; Luongo, F.; Magazzu, G.; Marcisovsky, M.; Marconi, S.; Marquez Lasso, F.; Marzocca, C.; Mattiazzo, S.; Menouni, M.; Minuti, M.; Mironova, M.; Miryala, S.; Monteil, E.; Moustakas, K.; Muõz Chavero, F.; Neue, G.; Orfanelli, S.; Paccagnella, A.; Pacher, L.; Palla, F.; Palomo Pinto, F. R.; Papadopoulou, A.; Paterno, A.; Petri, A.; Placidi, P.; Pohl, D.; Pradas, A.; Prydderch, M. L.; Pulli, A.; Ratti, L.; Re, V.; Rehman, A.; Rymaszewski, P.; Solal, M. C.; Standke, M.; Stiller, A.; Strebler, T.; Stugu, B.; Thomas, S.; Traversi, G.; Vogrig, D.; Vogt, M.; Wang, T.; Yang, H.; Zdenko, J.; Zimmerman, T.
TID effects in the lateral STI oxide of planar CMOS transistors
2024 Bonaldo, S.; Borghello, G.; Faccio, F.; Bagatin, M.; Mattiazzo, S.; Gerardin, S.
Total Ionizing Dose Effects in 3-D NAND Replacement Gate Flash Memory Cells
2024 Bagatin, M.; Gerardin, S.; Paccagnella, A.; Beltrami, S.
Depth Dependence of Neutron-induced Errors in 3D NAND Floating Gate Cells
2023 Gerardin, S.; Bagatin, M.; Paccagnella, A.; Beltrami, S.; Benvenuti, A.; Cazzaniga, C.
Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs
2023 Bonaldo, S.; Mattiazzo, S.; Bagatin, M.; Paccagnella, A.; Margutti, G.; Gerardin, S.
Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs
2023 Bonaldo, S.; Zhang, E. X.; Mattiazzo, S.; Paccagnella, A.; Gerardin, S.; Schrimpf, R. D.; Fleetwood, D. M.
DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments
2022 Bonaldo, S.; Ma, T.; Mattiazzo, S.; Baschirotto, A.; Enz, C.; Fleetwood, D. M.; Paccagnella, A.; Gerardin, S.
Energy Deposition by Ultrahigh Energy Ions in Large and Small Sensitive Volumes
2022 Bagatin, M.; Gerardin, S.; Paccagnella, A.; Santin, G.; Costantino, A.; Ferlet-Cavrois, V.; Muschitiello, M.; Beltrami, S.; Voss, K. O.; Trautmann, C.
Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs
2022 Ma, T; Bonaldo, S; Mattiazzo, S; Baschirotto, A; Enz, C; Paccagnella, A; Gerardin, S
Influence of Fin and Finger-Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultra-High Doses
2022 Ma, T.; Bonaldo, S.; Mattiazzo, S.; Baschirotto, A.; Enz, C.; Paccagnella, A.; Gerardin, S.
Radiation Tolerant Multi-Bit Flip-Flop System With Embedded Timing Pre-Error Sensing
2022 Jain, A.; Veggetti, A. M.; Crippa, D.; Benfante, A.; Gerardin, S.; Bagatin, M.
Secondary Particles Generated by Protons in 3D NAND Flash Memories
2022 Bagatin, M.; Gerardin, S.; Paccagnella, A.; Costantino, A.; Ferlet-Cavrois, V.; Santin, G.; Muschitiello, M.; Pesce, A.; Beltrami, S.
Single Event Effects in 3D NAND Flash Memory Cells with Replacement Gate Technology
2022 Bagatin, M.; Gerardin, S.; Paccagnella, A.; Costantino, A.; Ferlet-Cavrois, V.; Pesce, A.; Beltrami, S.
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultra-High Doses
2022 Bonaldo, S.; Gorchichko, M.; Zhang, E. X.; Ma, T.; Mattiazzo, S.; Bagatin, M.; Paccagnella, A.; Gerardin, S.; Schrimpf, R. D.; Reed, R. A.; Linten, D.; Mitard, J.; Fleetwood, D. M.
A Heavy-Ion Beam Monitor Based on 3-D NAND Flash Memories
2021 Gerardin, S.; Bagatin, M.; Paccagnella, A.; Beltrami, S.; Costantino, A.; Santin, G.; Pesce, A.; Ferlet-Cavrois, V.; Voss, K.
Depth Dependence of Threshold Voltage Shift in 3-D Flash Memories Exposed to X-Rays
2021 Bagatin, M.; Gerardin, S.; Paccagnella, A.; Beltrami, S.