GERARDIN, SIMONE

GERARDIN, SIMONE  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 225 (tempo di esecuzione: 0.063 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Impact of Proton Energy on Displacement Damage and Total Ionizing Dose in SiC Vertical Power MOSFETs 2026 Bonaldo S.Andreetta G.Bagatin M.Gerardin S.Paccagnella A. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Neutron-induced Single Event Effects in 3D Managed NAND Memories 2026 Bagatin, M.Gerardin, S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
TID Effects in Vertical SiC Power MOSFETs Irradiated at Different Temperatures 2026 Andreetta G.Bagatin M.Gerardin S.Mattiazzo S.Paccagnella A.Bonaldo S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Radiation Effects in Flash Memories: from Planar to 3D 2025 Bagatin, M.Gerardin, S. IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Radiation hardness properties and DCR reduction via laser annealing of InGaAs/InP SPADs for space applications 2025 Bagatin M.Gerardin S.Vallone G.Villoresi P.Tosi A. + OPTICS EXPRESS - -
The Gamma-Flash Program: high-energy radiation and particles in thunderstorms, lightning, and terrestrial gamma-ray flashes 2025 Aboudan, AlessioGerardin, Simone + JOURNAL OF PHYSICS. CONFERENCE SERIES - Journal of Physics: Conference Series
The HEARTS EU Project and Its Initial Results on Fragmented High-Energy Heavy-Ion Single-Event Effects Testing 2025 Bagatin, MartaGerardin, Simone + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
TID effects in the lateral STI oxide of planar CMOS transistors 2025 Bonaldo S.Bagatin M.Mattiazzo S.Gerardin S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Total-Dose-Induced Threshold Voltage Shift Dependence on Tier Pitch in 3-D nand Flash Memories 2025 Bagatin, MartaPaccagnella, AlessandroGerardin, Simone + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Total-Ionizing-Dose and Displacement Damage Effects in Trench SiC Power MOSFETs 2025 Bonaldo S.Bagatin M.Gerardin S.Mattiazzo S.Paccagnella A. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
X-Ray Effects on Alpha-Induced Soft Error Rate in 3-D NAND Replacement Gate Flash Memory Cells 2025 Bagatin, MartaPaccagnella, AlessandroGerardin, Simone + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Displacement Damage and Total Ionizing Dose induced by 3-MeV Protons in SiC Vertical Power MOSFETs 2024 Bonaldo S.Bagatin M.Gerardin S.Paccagnella A. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Impact of Tier Pitch Scaling on Heavy-Ion Sensitivity of 3-D NAND Flash Memories 2024 Bagatin M.Gerardin S.Paccagnella A. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs 2024 Bonaldo S.Mattiazzo S.Bagatin M.Paccagnella A.Gerardin S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses 2024 Bonaldo S.Mattiazzo S.Bagatin M.Gerardin S.Paccagnella A. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
RD53 pixel chips for the ATLAS and CMS Phase-2 upgrades at HL-LHC 2024 Bonaldo, S.Ding, L.Gerardin, S.Mattiazzo, S.Paccagnella, A.Vogrig, D. + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT - -
Total Ionizing Dose Effects in 3-D NAND Replacement Gate Flash Memory Cells 2024 Bagatin M.Gerardin S.Paccagnella A. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Depth Dependence of Neutron-induced Errors in 3D NAND Floating Gate Cells 2023 Gerardin S.Bagatin M.Paccagnella A. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs 2023 Bonaldo S.Mattiazzo S.Bagatin M.Paccagnella A.Gerardin S. + ELECTRONICS - -
Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs 2023 Bonaldo S.Mattiazzo S.Paccagnella A.Gerardin S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -