We investigate the effects and the causes of highvoltage charge-trapping phenomena in AlGaN/GaN Schottky-HEMTs grown on SiC substrate, and we present an high-voltage pulsed system, implemented by a cost-effective fully-customable modular solution. The characterization methodology includes double-pulsed ID-VD measurements, time-resolved RON recovery transients, and leakage-currents analysis. The observed parasitic dynamic RON-increase is triggered by high drain-voltage (>50V), and likely originates from the trapping of parasitic electrons supplied by leakage currents at the crystallographic defect-states located within the epitaxial structure.

Characterization of High-Voltage Charge-Trapping Effects in GaN-based Power HEMTs

BISI, DAVIDE;STOCCO, ANTONIO;MENEGHINI, MATTEO;RAMPAZZO, FABIANA;CESTER, ANDREA;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2014

Abstract

We investigate the effects and the causes of highvoltage charge-trapping phenomena in AlGaN/GaN Schottky-HEMTs grown on SiC substrate, and we present an high-voltage pulsed system, implemented by a cost-effective fully-customable modular solution. The characterization methodology includes double-pulsed ID-VD measurements, time-resolved RON recovery transients, and leakage-currents analysis. The observed parasitic dynamic RON-increase is triggered by high drain-voltage (>50V), and likely originates from the trapping of parasitic electrons supplied by leakage currents at the crystallographic defect-states located within the epitaxial structure.
2014
Solid State Device Research Conference (ESSDERC), 2014 44th European
44th European Solid-State Device Research Conference
9781479943784
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3143946
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