STOCCO, ANTONIO

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STOCCO, ANTONIO

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Dipartimento di Ingegneria dell'Informazione - DEI

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Risultati 1 - 18 di 18 (tempo di esecuzione: 0.048 secondi).

Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

2014 Meneghini, Matteo; Rossetto, Isabella; Bisi, Davide; Stocco, Antonio; Alessandro, Chini; Alessio, Pantellini; Claudio, Lanzieri; Antonio, Nanni; Meneghesso, Gaudenzio; Zanoni, Enrico

Characterization of Localized degradation in reverse-biased GaN HEMTs by scanning Transmission Electron Microscopy and Electron Holography

2010 D. A., Cullen; D. J., Smith; Stocco, Antonio; Meneghesso, Gaudenzio; Zanoni, Enrico; M. R., Mccartney

Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress

2013 Meneghesso, Gaudenzio; Meneghini, Matteo; Stocco, Antonio; Bisi, Davide; DE SANTI, Carlo; Rossetto, Isabella; Zanandrea, Alberto; Rampazzo, Fabiana; Zanoni, Enrico

Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons

2012 Meneghini, Matteo; Stocco, Antonio; Silvestri, Riccardo; Meneghesso, Gaudenzio; Zanoni, Enrico

Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface

2013 Meneghini, Matteo; Bertin, Marco; Stocco, Antonio; Gabriele dal, Santo; Denis, Marcon; Pawel E., Malinowski; Alessandro, Chini; Meneghesso, Gaudenzio; Zanoni, Enrico

Double Control Gate Field-Effect Transistor for Area Efficient and Cost Effective Applications

2014 Marino, FABIO ALESSIO; Stocco, Antonio; Barbato, Marco; Zanoni, Enrico; Meneghesso, Gaudenzio

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs

2015 Bisi, D; Stocco, A.; Rossetto, I.; Meneghini, M.; Rampazzo, Fabiana.; Chini, A.; Soci, F.; Pantellini, A.; Lanzieri, C.; Gamarra, P.; Lacam, C.; Tordjman, M.; Di Forte-Poisson, M. -A.; De Salvador, D.; Bazzan, M.; Meneghesso, G.; Zanoni, E.

Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions

2013 Meneghini, Matteo; Zanandrea, Alberto; Rampazzo, Fabiana; Stocco, Antonio; Bertin, Marco; Cibin, Giulia; Dionyz, Pogany; Zanoni, Enrico; Meneghesso, Gaudenzio

Electroluminescence and Transmission Electron Microscopy Characterization of Reverse-Biased AlGaN/GaN Devices

2013 David A., Cullen; David J., Smith; Adriana, Passaseo; Vittorianna, Tasco; Stocco, Antonio; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico

Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors

2010 Meneghini, Matteo; Stocco, Antonio; Ronchi, Nicolo'; Rossi, F; Salviati, G; Meneghesso, Gaudenzio; Zanoni, Enrico

Failure signatures on 0.25 mu m GaN HEMTs for high-power RF applications

2014 Stocco, Antonio; Dalcanale, Stefano; Rampazzo, Fabiana; Meneghini, Matteo; Meneghesso, Gaudenzio; J., Gruenenpuett; B., Lambert; H., Blanck; Zanoni, Enrico

Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors during RF Operation: Correlation with GaN Buffer Design

2015 Bisi, Davide; Chini, A.; Soci, F.; Stocco, Antonio; Meneghini, Matteo; Pantellini, A.; Nanni, A.; Lanzieri, C.; Gamarra, P.; Lacam, C.; Tordjman, M.; Di Forte Poisson, M. A.; Meneghesso, Gaudenzio; Zanoni, Enrico

Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method

2011 Meneghini, Matteo; Ronchi, Nicolo'; Stocco, Antonio; Meneghesso, Gaudenzio; Mishra, Uk; Pei, Y; Zanoni, Enrico

Proton induced trapping effect on space compatible GaN HEMTs

2014 Stocco, Antonio; Gerardin, Simone; Bisi, Davide; Dalcanale, Stefano; Rampazzo, Fabiana; Meneghini, Matteo; Meneghesso, Gaudenzio; J., Gruenenpuett; B., Lambert; H., Blanck; Zanoni, Enrico

Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test

2009 Ronchi, Nicolo'; Zanon, Franco; Stocco, Antonio; Tazzoli, Augusto; Zanoni, Enrico; Meneghesso, Gaudenzio

Reliability issues of Gallium Nitride High Electron Mobility Transistors

2010 Meneghesso, Gaudenzio; Meneghini, Matteo; Tazzoli, Augusto; Ronchi, Nicolo'; Stocco, Antonio; A., Chini; Zanoni, Enrico

Single- and double-heterostructure GaN-HEMTs devices for power switching applications

2012 Zanandrea, Alberto; E., Bahat Treidel; Rampazzo, Fabiana; Stocco, Antonio; Meneghini, Matteo; Zanoni, Enrico; O., Hilt; P., Ivo; J., Wuerfl; Meneghesso, Gaudenzio

Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

2012 Meneghini, Matteo; Stocco, Antonio; Bertin, Marco; D., Marcon; A., Chini; Meneghesso, Gaudenzio; Zanoni, Enrico

Titolo	Data di pubblicazione	Autori	Rivista	Serie	Titolo libro
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements	2014	MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDESTOCCO, ANTONIOAlessandro ChiniAlessio PantelliniClaudio LanzieriAntonio NanniMENEGHESSO, GAUDENZIOZANONI, ENRICO + -	IEEE TRANSACTIONS ON ELECTRON DEVICES	-	-
Characterization of Localized degradation in reverse-biased GaN HEMTs by scanning Transmission Electron Microscopy and Electron Holography	2010	D. A. CULLEND. J. SMITHSTOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICOM. R. MCCARTNEY + -	MICROSCOPY AND MICROANALYSIS	-	-
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress	2013	MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIOBISI, DAVIDEDE SANTI, CARLOROSSETTO, ISABELLAZANANDREA, ALBERTORAMPAZZO, FABIANAZANONI, ENRICO	MICROELECTRONIC ENGINEERING	-	-
Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons	2012	MENEGHINI, MATTEOSTOCCO, ANTONIOSILVESTRI, RICCARDOMENEGHESSO, GAUDENZIOZANONI, ENRICO	APPLIED PHYSICS LETTERS	-	-
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface	2013	MENEGHINI, MATTEOBERTIN, MARCOSTOCCO, ANTONIOGabriele dal SantoDenis MarconPawel E. MalinowskiAlessandro ChiniMENEGHESSO, GAUDENZIOZANONI, ENRICO + -	APPLIED PHYSICS LETTERS	-	-
Double Control Gate Field-Effect Transistor for Area Efficient and Cost Effective Applications	2014	MARINO, FABIO ALESSIOSTOCCO, ANTONIOBARBATO, MARCOZANONI, ENRICOMENEGHESSO, GAUDENZIO	IEEE ELECTRON DEVICE LETTERS	-	-
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs	2015	Bisi, DStocco, A.Rossetto, I.Meneghini, M.Rampazzo, Fabiana.Chini, A.Soci, F.Pantellini, A.Lanzieri, C.Gamarra, P.Lacam, C.Tordjman, M.Di Forte-Poisson, M. -A.De Salvador, D.Bazzan, M.Meneghesso, G.Zanoni, E. + -	MICROELECTRONICS RELIABILITY	-	-
Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions	2013	MENEGHINI, MATTEOZANANDREA, ALBERTORAMPAZZO, FABIANASTOCCO, ANTONIOBERTIN, MARCOCIBIN, GIULIADionyz PoganyZANONI, ENRICOMENEGHESSO, GAUDENZIO + -	JAPANESE JOURNAL OF APPLIED PHYSICS. PART 1, REGULAR PAPERS & SHORT NOTES	-	-
Electroluminescence and Transmission Electron Microscopy Characterization of Reverse-Biased AlGaN/GaN Devices	2013	David A. CullenDavid J. SmithAdriana PassaseoVittorianna TascoSTOCCO, ANTONIOMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + -	IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY	-	-
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors	2010	MENEGHINI, MATTEOSTOCCO, ANTONIORONCHI, NICOLO'ROSSI FSALVIATI GMENEGHESSO, GAUDENZIOZANONI, ENRICO + -	APPLIED PHYSICS LETTERS	-	-
Failure signatures on 0.25 mu m GaN HEMTs for high-power RF applications	2014	STOCCO, ANTONIODALCANALE, STEFANORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOJ. GruenenpuettB. LambertH. BlanckZANONI, ENRICO + -	MICROELECTRONICS RELIABILITY	-	-
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors during RF Operation: Correlation with GaN Buffer Design	2015	BISI, DAVIDEChini, A.Soci, F.STOCCO, ANTONIOMENEGHINI, MATTEOPantellini, A.Nanni, A.Lanzieri, C.Gamarra, P.Lacam, C.Tordjman, M.Di Forte Poisson, M. A.MENEGHESSO, GAUDENZIOZANONI, ENRICO + -	IEEE ELECTRON DEVICE LETTERS	-	-
Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method	2011	MENEGHINI, MATTEORONCHI, NICOLO'STOCCO, ANTONIOMENEGHESSO, GAUDENZIOMishra UKPei YZANONI, ENRICO + -	IEEE TRANSACTIONS ON ELECTRON DEVICES	-	-
Proton induced trapping effect on space compatible GaN HEMTs	2014	STOCCO, ANTONIOGERARDIN, SIMONEBISI, DAVIDEDALCANALE, STEFANORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOJ. GruenenpuettB. LambertH. BlanckZANONI, ENRICO + -	MICROELECTRONICS RELIABILITY	-	-
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test	2009	RONCHI, NICOLO'ZANON, FRANCOSTOCCO, ANTONIOTAZZOLI, AUGUSTOZANONI, ENRICOMENEGHESSO, GAUDENZIO	MICROELECTRONICS RELIABILITY	-	-
Reliability issues of Gallium Nitride High Electron Mobility Transistors	2010	MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOTAZZOLI, AUGUSTORONCHI, NICOLO'STOCCO, ANTONIOA. CHINIZANONI, ENRICO + -	INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES	-	-
Single- and double-heterostructure GaN-HEMTs devices for power switching applications	2012	ZANANDREA, ALBERTOE. Bahat TreidelRAMPAZZO, FABIANASTOCCO, ANTONIOMENEGHINI, MATTEOZANONI, ENRICOO. HiltP. IvoJ. WuerflMENEGHESSO, GAUDENZIO + -	MICROELECTRONICS RELIABILITY	-	-
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias	2012	MENEGHINI, MATTEOSTOCCO, ANTONIOBERTIN, MARCOD. MarconA. ChiniMENEGHESSO, GAUDENZIOZANONI, ENRICO + -	APPLIED PHYSICS LETTERS	-	-